DRAM

結果: 2,507
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 存儲容量 數據匯流排寬度 最高時鐘頻率 封裝/外殼 組織 存取時間 電源電壓 - 最小值 電源電壓 - 最大值 最低工作溫度 最高工作溫度 系列 封裝
ISSI DRAM 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS, IT, T&R
2,496預期2026/10/22
最少: 1
倍數: 1
: 2,500

SDRAM 128 Mbit 8 bit/16 bit 166 MHz BGA-54 16 M x 8/8 M x 16 6.5 ns 3 V 3.6 V - 40 C + 85 C Reel, Cut Tape, MouseReel
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
2,500在途量
最少: 1
倍數: 1
: 2,500

SDRAM 128 Mbit 32 bit 166 MHz BGA-90 4 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C Reel, Cut Tape
ISSI DRAM 2G 128Mx16 1600MT/s DDR3L 1.35V
1,499預期2026/11/24
最少: 1
倍數: 1
: 1,500

SDRAM - DDR3L BGA-96 20 ns IS43TR16128CL Reel, Cut Tape, MouseReel
ISSI DRAM 16G, 1.35V, DDR3L, 1Gx16,1600MT/s at 11-11-11, 96 ball BGA (10mm x 14mm) RoHS
136在途量
最少: 1
倍數: 1
SDRAM - DDR3L 16 Gbit 16 bit 800 MHz BGA-96 1 G x 16 20 ns 1.283 V 1.45 V 0 C + 95 C
Alliance Memory DRAM LPDDR2, 4G, 128M X 32, 1.2V, 134 BALL BGA, 400MHZ, Industrial TEMP - Tray
158預期2026/10/21
最少: 1
倍數: 1

SDRAM Mobile - LPDDR2 4 Gbit 32 bit 400 MHz FBGA-134 128 M x 32 5.5 ns 1.14 V 1.95 V - 40 C + 85 C AS4C128M32MD2A-25 Tray
Alliance Memory DRAM DDR2, 2G, 128M x 16, 1.8V, 400 Mhz, 84ball FBGA, (A-die), Automotive Temp - Tray
209預期2026/9/21
最少: 1
倍數: 1

SDRAM - DDR2 2 Gbit 16 bit 400 MHz FBGA-84 128 M x 16 400 ps 1.7 V 1.9 V - 40 C + 105 C AS4C128M16D2A-25 Tray
Alliance Memory DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray
162預期2026/8/10
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 5 ns 3 V 3.6 V - 40 C + 105 C Tray
Alliance Memory DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Automotive temp - Tray
432在途量
最少: 1
倍數: 1

SDRAM 64 Mbit 16 bit 166 MHz TSOP-II-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 105 C AS4C4M16SA Tray
Alliance Memory DRAM DDR3, 1G, 64M x 16, 1.5V, 96-ball FBGA, 800MHz, (B-die), Commercial Temp - Tray
190預期2026/8/21
最少: 1
倍數: 1

SDRAM - DDR3 1 Gbit 16 bit 800 MHz FBGA-96 64 M x 16 20 ns 1.425 V 1.575 V 0 C + 95 C AS4C64M16D3B Tray
Alliance Memory DRAM DDR3, 1G, 64M x 16, 1.5V, 96-ball FBGA, 800MHz, (B-die), Automotive Temp - Tray
190預期2026/12/15
最少: 1
倍數: 1

SDRAM - DDR3 1 Gbit 16 bit 800 MHz FBGA-96 64 M x 16 20 ns 1.425 V 1.575 V - 40 C + 105 C AS4C64M16D3B Tray
Alliance Memory DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
348預期2026/8/26
最少: 1
倍數: 1

SDRAM Mobile 512 Mbit 32 bit 166 MHz FBGA-90 16 M x 32 5.5 ns 1.7 V 1.95 V - 40 C + 85 C AS4C16M32MSA Tray
Alliance Memory DRAM SDRAM, 64Mb, 2M X 32, 3.3V, 90-ball BGA, 166 MHz, Industrial Temp - Tray
312預期2026/12/16
最少: 1
倍數: 1

SDRAM 64 Mbit 32 bit 166 MHz TFBGA-90 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C AS4C2M32S Tray
ISSI IS43LQ16256B-062BLI
ISSI DRAM 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
272預期2027/7/28
最少: 1
倍數: 1

ISSI IS66WVH32M8DALL-166B1LI
ISSI DRAM 256Mb, HyperRAM, 32Mbx8, 1.8V, 166MHz, 24-ball TFBGA, RoHS
960在途量
最少: 1
倍數: 1
HyperRAM 256 Mbit 8 bit 166 MHz 32 M x 8 36 ns 1.7 V 1.95 V - 40 C + 85 C
ISSI IS66WVH16M8DALL-166B1LI
ISSI DRAM 128Mb, HyperRAM, 16Mbx8, 1.8V, 166MHz, 24-ball TFBGA, RoHS
841在途量
最少: 1
倍數: 1
HyperRAM 128 Mbit 8 bit 166 MHz TFBGA-24 16 M x 8 40 ns 1.7 V 1.95 V - 40 C + 85 C
ISSI IS43LR16128B-5BLI
ISSI DRAM 2G, 1.8V, Mobile DDR, 128Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS, IT 無庫存前置作業時間 52 週
最少: 1
倍數: 1

BGA-60
ISSI IS43LR16640C-5BLI
ISSI DRAM 1G, 1.8V, Mobile DDR, 64Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS, IT
280在途量
最少: 1
倍數: 1

BGA-60
ISSI IS46QR16512A-075VBLA2
ISSI DRAM Automotive (Tc: -40 to +105C), 8G, 1.2V, DDR4, 512Mx16, 2666MT/s at 19-19-19, 96 ball BGA (10mm x14mm) RoHS, IT
136預期2026/12/16
最少: 1
倍數: 1

BGA-96
Alliance Memory AS4C128M16MD2A-25BIN
Alliance Memory DRAM LPDDR2, 2G, 128M X 16, 1.2V, 134ball BGA A-DIE INDUSTRIAL TEMP - Tray
121在途量
最少: 1
倍數: 1

SDRAM Mobile - LPDDR2 2 Gbit 16 bit 400 MHz FBGA-134 128 M x 16 5.5 ns 1.7 V 1.95 V - 40 C + 85 C AS4C128M16MD2A-25 Tray
Alliance Memory AS4C16M32MD1B-5BIN
Alliance Memory DRAM LPDDR1, 512Mb, 16M x 32 , 1.8V, 90-Ball BGA,200MHz, Industrial Temp ( -40C to 85C), B DIE
180預期2026/8/21
最少: 1
倍數: 1

Tray
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 86 pin TSOP II, RoHS
108預期2026/8/31
最少: 1
倍數: 1

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F
ISSI DRAM 512M 64Mx8 400MHz DDR2 1.8V
242預期2026/10/12
最少: 1
倍數: 1

SDRAM - DDR2 512 Mbit 8 bit 400 MHz BGA-60 64 M x 8 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR86400E
ISSI DRAM 512M 1.2/1.8V 32Mx16 400MHz 134ball BGA
171預期2026/8/10
最少: 1
倍數: 1

SDRAM Mobile - LPDDR2 512 Mbit 16 bit 400 MHz FBGA-134 32 M x 16 1.14 V 1.95 V - 40 C + 85 C IS43LD32160A
ISSI DRAM 2G 128Mx16 1600MT/s DDR3L 1.35V
10在途量
最少: 1
倍數: 1

SDRAM - DDR3L 2 Gbit 16 bit 800 MHz BGA-96 128 M x 16 20 ns 1.283 V 1.45 V 0 C + 95 C IS43TR16128CL Tray
ISSI DRAM 2G, 1.35V, DDR3L, 256Mx8, 1600MT/s at 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT 無庫存前置作業時間 52 週
最少: 1
倍數: 1

SDRAM - DDR3L 2 Gbit 8 bit BGA-78 256 M x 8 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR82560DL