|
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
- APS6408L-OBM-BA
- AP Memory
-
1:
NT$123.32
-
28,700在途量
|
Mouser 元件編號
878-APS6408L-OBM-BA
|
AP Memory
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
|
|
28,700在途量
在途量:
14,300 預期2026/11/2
14,400 預期2026/11/23
|
|
最少: 1
倍數: 1
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
8 M x 8
|
5.5 ns
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM 256M, 3.3V, SDRAM, 32Mx8, 166MHz, 54 pin TSOP II (400 mil) RoHS, IT
- IS42S83200J-6TLI
- ISSI
-
1:
NT$471.43
-
45庫存量
-
NRND
|
Mouser 元件編號
870-42S83200J6TLI
NRND
|
ISSI
|
DRAM 256M, 3.3V, SDRAM, 32Mx8, 166MHz, 54 pin TSOP II (400 mil) RoHS, IT
|
|
45庫存量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
256 Mbit
|
8 bit
|
166 MHz
|
TSOP-II-54
|
32 M x 8
|
5.4 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS42S83200J
|
|
|
|
|
DRAM SPCM
- S27KS0642GABHI020
- Infineon Technologies
-
1:
NT$492.58
-
6,148在途量
-
壽命結束
|
Mouser 元件編號
727-S27KS0642GABHI02
壽命結束
|
Infineon Technologies
|
DRAM SPCM
|
|
6,148在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
64 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
8 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
- IS43R86400D-5TL
- ISSI
-
1:
NT$354.20
-
96庫存量
-
工廠指定訂單
|
Mouser 元件編號
870-IS43R86400D-5TL
工廠指定訂單
|
ISSI
|
DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
|
|
96庫存量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR
|
512 Mbit
|
8 bit
|
200 MHz
|
TSOP-II-66
|
64 M x 8
|
5 ns
|
2.5 V
|
2.7 V
|
0 C
|
+ 70 C
|
IS43R86400D
|
Tray
|
|
|
|
DRAM SPCM
- S80KS5122GABHV020
- Infineon Technologies
-
1:
NT$800.53
-
338在途量
|
Mouser 元件編號
727-S5122GABHV020
|
Infineon Technologies
|
DRAM SPCM
|
|
338在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
512 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
64 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM SPCM
- S27KS0642GABHI030
- Infineon Technologies
-
1:
NT$492.94
-
313在途量
-
壽命結束
|
Mouser 元件編號
727-S27KS0642GABHI03
壽命結束
|
Infineon Technologies
|
DRAM SPCM
|
|
313在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
64 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
8 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM SPCM
- S27KS0643GABHV020
- Infineon Technologies
-
1:
NT$527.00
-
227在途量
-
壽命結束
|
Mouser 元件編號
727-S27KS0643GABHV02
壽命結束
|
Infineon Technologies
|
DRAM SPCM
|
|
227在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
64 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
8 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S80KS2562GABHI020
- S80KS2562GABHI020
- Infineon Technologies
-
1:
NT$806.27
-
338在途量
|
Mouser 元件編號
727-S2562GABHI020
|
Infineon Technologies
|
DRAM SPCM
|
|
338在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
256 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
32 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S80KS2562GABHV020
- S80KS2562GABHV020
- Infineon Technologies
-
1:
NT$862.55
-
338在途量
|
Mouser 元件編號
727-S2562GABHV020
|
Infineon Technologies
|
DRAM SPCM
|
|
338在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
256 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
32 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM Octal Double-Data-Rate PSRAM, 133 MHz, BGA-24
- APS6408L-3OC-BA
- AP Memory
-
1:
NT$167.06
-
480預期2026/11/20
|
Mouser 元件編號
878-APS6408L-3OC-BA
|
AP Memory
|
DRAM Octal Double-Data-Rate PSRAM, 133 MHz, BGA-24
|
|
480預期2026/11/20
|
|
最少: 1
倍數: 1
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
133 MHz
|
BGA-24
|
8 M x 8
|
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Industrial Temp - Tray
- AS4C512M8D4-83BIN
- Alliance Memory
-
1:
NT$2,974.83
-
726預期2027/1/21
|
Mouser 元件編號
913-512M8D4-83BIN
|
Alliance Memory
|
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Industrial Temp - Tray
|
|
726預期2027/1/21
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR4
|
4 Gbit
|
8 bit
|
1.2 GHz
|
FBGA-78
|
512 M x 8
|
18 ns
|
1.14 V
|
1.26 V
|
- 40 C
|
+ 95 C
|
AS4C512M8D4-83
|
Tray
|
|
|
|
DRAM DDR2, 1G, 128M x 8, 1.8V, 60-ball BGA, 400 MHz, Industrial Temp A Die - Tray
- AS4C128M8D2A-25BIN
- Alliance Memory
-
1:
NT$2,054.56
-
233預期2027/1/26
|
Mouser 元件編號
913-4C128M8D2A25BIN
|
Alliance Memory
|
DRAM DDR2, 1G, 128M x 8, 1.8V, 60-ball BGA, 400 MHz, Industrial Temp A Die - Tray
|
|
233預期2027/1/26
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR2
|
1 Gbit
|
8 bit
|
400 MHz
|
FBGA-60
|
128 M x 8
|
400 ps
|
1.7 V
|
1.9 V
|
- 40 C
|
+ 95 C
|
AS4C128M8D2A
|
Tray
|
|
|
|
DRAM 256Mb, HyperRAM, 32Mbx8, 1.8V, 166MHz, 24-ball TFBGA, RoHS
ISSI IS66WVH32M8DALL-166B1LI
- IS66WVH32M8DALL-166B1LI
- ISSI
-
1:
NT$463.18
-
4,320在途量
|
Mouser 元件編號
870-6WVH32M8DAL6B1LI
|
ISSI
|
DRAM 256Mb, HyperRAM, 32Mbx8, 1.8V, 166MHz, 24-ball TFBGA, RoHS
|
|
4,320在途量
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
256 Mbit
|
8 bit
|
166 MHz
|
|
32 M x 8
|
36 ns
|
1.7 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM 2G 256Mx8 400MHz DDR2 1.8V
- IS43DR82560C-25DBL
- ISSI
-
1:
NT$677.21
-
239預期2027/9/30
|
Mouser 元件編號
870-43DR82560C25DBL
|
ISSI
|
DRAM 2G 256Mx8 400MHz DDR2 1.8V
|
|
239預期2027/9/30
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR2
|
2 Gbit
|
8 bit
|
400 MHz
|
BGA-60
|
256 M x 8
|
400 ps
|
1.7 V
|
1.9 V
|
0 C
|
+ 85 C
|
IS43DR82560C
|
Reel
|
|
|
|
DRAM 8G, 1.5V, DDR3, 1Gx8, 1600MT/s @ 11-11-11, 78 ball BGA (10mm x 14mm) RoHS, IT
- IS43TR81024B-125KBLI
- ISSI
-
1:
NT$3,276.33
-
112在途量
|
Mouser 元件編號
870-43T81024B125KBLI
|
ISSI
|
DRAM 8G, 1.5V, DDR3, 1Gx8, 1600MT/s @ 11-11-11, 78 ball BGA (10mm x 14mm) RoHS, IT
|
|
112在途量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR3
|
8 Gbit
|
8 bit
|
800 MHz
|
BGA-78
|
1 G x 8
|
20 ns
|
1.425 V
|
1.575 V
|
- 40 C
|
+ 95 C
|
IS43TR81024B
|
|
|
|
|
DRAM 8G, 1.35V, DDR3L, 1Gx8, 1600MT/s @ 11-11-11, 78 ball BGA (10mm x 14mm) RoHS, IT
- IS43TR81024BL-125KBLI
- ISSI
-
1:
NT$3,364.16
-
126在途量
|
Mouser 元件編號
870-43T81024BL125KBI
|
ISSI
|
DRAM 8G, 1.35V, DDR3L, 1Gx8, 1600MT/s @ 11-11-11, 78 ball BGA (10mm x 14mm) RoHS, IT
|
|
126在途量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR3L
|
8 Gbit
|
8 bit
|
800 MHz
|
BGA-78
|
1 G x 8
|
20 ns
|
1.283 V
|
1.45 V
|
- 40 C
|
+ 95 C
|
IS43TR81024B
|
|
|
|
|
DRAM 8G, 1.35V, DDR3L, 1Gx8, 1600MT/s @ 11-11-11, 78 ball BGA (10mm x 14mm) RoHS
- IS43TR81024BL-125KBL
- ISSI
-
1:
NT$1,630.10
-
272預期2027/1/21
|
Mouser 元件編號
870-43T81024BL125KBL
|
ISSI
|
DRAM 8G, 1.35V, DDR3L, 1Gx8, 1600MT/s @ 11-11-11, 78 ball BGA (10mm x 14mm) RoHS
|
|
272預期2027/1/21
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR3L
|
8 Gbit
|
8 bit
|
800 MHz
|
BGA-78
|
1 G x 8
|
20 ns
|
1.283 V
|
1.45 V
|
0 C
|
+ 95 C
|
IS43TR81024B
|
|
|
|
|
DRAM 2G, 1.5V, DDR3L, 256Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
- IS43TR82560D-125KBLI
- ISSI
-
1:
NT$909.51
-
446在途量
|
Mouser 元件編號
870-43T82560D125KBLI
|
ISSI
|
DRAM 2G, 1.5V, DDR3L, 256Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
|
|
446在途量
在途量:
135 預期2026/10/23
311 預期2026/11/2
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR3
|
2 Gbit
|
8 bit
|
800 MHz
|
BGA-78
|
256 M x 8
|
20 ns
|
1.425 V
|
1.575 V
|
- 40 C
|
+ 95 C
|
IS43TR82560D
|
|
|
|
|
DRAM 4G, 1.35V, DDR3L, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
- IS43TR85120BL-125KBLI
- ISSI
-
1:
NT$1,046.46
-
451在途量
|
Mouser 元件編號
870-43T85120BL125KBI
|
ISSI
|
DRAM 4G, 1.35V, DDR3L, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
|
|
451在途量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR3L
|
4 Gbit
|
8 bit
|
800 MHz
|
BGA-78
|
512 M x 8
|
20 ns
|
1.425 V
|
1.575 V
|
- 40 C
|
+ 95 C
|
IS43TR85120BL
|
|
|
|
|
DRAM 2G 256Mx8 1600MT/s DDR3 1.5V
- IS43TR82560C-125KBL
- ISSI
-
1:
NT$860.04
-
173在途量
|
Mouser 元件編號
870-43TR82560C125KBL
|
ISSI
|
DRAM 2G 256Mx8 1600MT/s DDR3 1.5V
|
|
173在途量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR3
|
2 Gbit
|
8 bit
|
800 MHz
|
BGA-78
|
256 M x 8
|
20 ns
|
1.425 V
|
1.575 V
|
0 C
|
+ 95 C
|
IS43TR82560C
|
|
|
|
|
DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
- IS66WVH8M8FALL-200B1LI
- ISSI
-
1:
NT$195.02
-
960在途量
|
Mouser 元件編號
870-VH8M8FALL200B1LI
|
ISSI
|
DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
|
|
960在途量
在途量:
480 預期2027/4/14
480 預期2027/4/19
|
|
最少: 1
倍數: 1
|
|
|
HyperRAM
|
64 Mbit
|
8 bit
|
200 MHz
|
TFBGA-24
|
8 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
- IS66WVR8M8FBLL-104NLI
- ISSI
-
1:
NT$184.63
-
3,111在途量
|
Mouser 元件編號
870-WVR8M8FBLL104NLI
|
ISSI
|
DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
|
|
3,111在途量
在途量:
2,011 預期2027/4/12
1,100 預期2027/4/16
|
|
最少: 1
倍數: 1
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
104 MHz
|
SOIC-8
|
8 M x 8
|
7 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM 512M, 3.3V, SDRAM, 64Mx8, 143Mhz, 54 pin TSOP II RoHS, IT
- IS42S86400F-7TLI
- ISSI
-
1:
NT$559.26
-
864在途量
-
NRND
|
Mouser 元件編號
870-42S86400F7TLI
NRND
|
ISSI
|
DRAM 512M, 3.3V, SDRAM, 64Mx8, 143Mhz, 54 pin TSOP II RoHS, IT
|
|
864在途量
在途量:
540 預期2026/10/23
324 預期2026/10/27
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
512 Mbit
|
8 bit
|
143 MHz
|
TSOP-II-54
|
64 M x 8
|
5.4 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS42S86400F
|
|
|
|
|
DRAM 128Mb, HyperRAM, 16Mbx8, 3.0V, 100MHz, 24-ball TFBGA, RoHS
ISSI IS66WVH16M8DBLL-100B1LI-TR
- IS66WVH16M8DBLL-100B1LI-TR
- ISSI
-
1:
NT$412.99
-
2,500預期2027/2/17
|
Mouser 元件編號
870-6WVDBL100B1LITR
|
ISSI
|
DRAM 128Mb, HyperRAM, 16Mbx8, 3.0V, 100MHz, 24-ball TFBGA, RoHS
|
|
2,500預期2027/2/17
|
|
最少: 1
倍數: 1
:
2,500
|
|
|
HyperRAM
|
128 Mbit
|
8 bit
|
100 MHz
|
TFBGA-24
|
16 M x 8
|
40 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
|
Reel, Cut Tape
|
|
|
|
DRAM 512M 64Mx8 400MHz DDR2 1.8V
- IS43DR86400E-25DBLI
- ISSI
-
1:
NT$380.01
-
192預期2026/10/23
|
Mouser 元件編號
870-43DR86400E25DBLI
|
ISSI
|
DRAM 512M 64Mx8 400MHz DDR2 1.8V
|
|
192預期2026/10/23
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR2
|
512 Mbit
|
8 bit
|
400 MHz
|
BGA-60
|
64 M x 8
|
400 ps
|
1.7 V
|
1.9 V
|
- 40 C
|
+ 85 C
|
IS43DR86400E
|
|
|