|
|
DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
- APS12808L-OBM-BA
- AP Memory
-
1:
NT$167.06
-
4,669庫存量
|
Mouser 元件編號
878-APS12808L-OBM-BA
|
AP Memory
|
DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
|
|
4,669庫存量
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
128 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
16 M x 8
|
5.5 ns
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
- APS25608N-OBR-BD
- AP Memory
-
1:
NT$207.93
-
5,457庫存量
|
Mouser 元件編號
878-APS25608N-OBR-BD
|
AP Memory
|
DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
|
|
5,457庫存量
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
256 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
32 M x 8
|
6.5 ns
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
- APS51208N-OBR-BD
- AP Memory
-
1:
NT$423.75
-
306庫存量
-
2,880預期2026/11/20
|
Mouser 元件編號
878-APS51208N-OBR-BD
|
AP Memory
|
DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
|
|
306庫存量
2,880預期2026/11/20
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
512 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
64 M x 8
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
- APS6408L-OCH-BA
- AP Memory
-
1:
NT$139.82
-
538庫存量
|
Mouser 元件編號
878-APS6408L-OCH-BA
|
AP Memory
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
|
|
538庫存量
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
8 M x 8
|
5.5 ns
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp (A)
- AS4C16M16D1A-5TCN
- Alliance Memory
-
1:
NT$562.13
-
3,929庫存量
|
Mouser 元件編號
913-4C16M16D1A5TCN
|
Alliance Memory
|
DRAM DDR1, 256Mb, 16M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp (A)
|
|
3,929庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR
|
256 Mbit
|
16 bit
|
200 MHz
|
TSOP-II-66
|
16 M x 16
|
700 ps
|
2.3 V
|
2.7 V
|
0 C
|
+ 70 C
|
AS4C16M16D1A
|
Tray
|
|
|
|
DRAM SPCM
- S27KS0642GABHV020
- Infineon Technologies
-
1:
NT$527.35
-
1,512庫存量
-
壽命結束
|
Mouser 元件編號
727-S27KS0642GABHV02
壽命結束
|
Infineon Technologies
|
DRAM SPCM
|
|
1,512庫存量
|
|
最少： 1
倍數： 1
|
|
|
HyperRAM
|
64 Mbit
|
8 bit
|
200 MHz
|
FBGA-24
|
8 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
- APS51208N-OCH-BD
- AP Memory
-
1:
NT$528.79
-
844庫存量
|
Mouser 元件編號
878-APS51208N-OCH-BD
|
AP Memory
|
DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
|
|
844庫存量
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
512 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
64 M x 8
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S70KS1282GABHB020
- S70KS1282GABHB020
- Infineon Technologies
-
1:
NT$943.57
-
621庫存量
-
壽命結束
|
Mouser 元件編號
727-S70KS1282GABHB20
壽命結束
|
Infineon Technologies
|
DRAM SPCM
|
|
621庫存量
|
|
最少： 1
倍數： 1
|
|
|
HyperRAM
|
128 Mbit
|
8 bit
|
200 MHz
|
|
16 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM 512Mb LPDDR, x16, 200MHz, Industrial Temp, 46nm
- W949D6DBHX5I
- Winbond
-
1:
NT$1,050.41
-
308庫存量
-
NRND
|
Mouser 元件編號
454-W949D6DBHX5I
NRND
|
Winbond
|
DRAM 512Mb LPDDR, x16, 200MHz, Industrial Temp, 46nm
|
|
308庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM Mobile - LPDDR
|
512 Mbit
|
16 bit
|
200 MHz
|
VFBGA-60
|
32 M x 16
|
6.5 ns
|
1.7 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
W949D6DB
|
Tray
|
|
|
|
DRAM 1Gb LPDDR, x32, 200MHz, Ind temp
- W94AD2KBJX5I
- Winbond
-
1:
NT$1,585.65
-
239庫存量
-
NRND
|
Mouser 元件編號
454-W94AD2KBJX5I
NRND
|
Winbond
|
DRAM 1Gb LPDDR, x32, 200MHz, Ind temp
|
|
239庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM Mobile - LPDDR
|
1 Gbit
|
32 bit
|
200 MHz
|
VFBGA-90
|
32 M x 32
|
|
1.7 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
W94AD2KB
|
Tray
|
|
|
|
DRAM 1Gb LPDDR, x16, 200MHz, Ind temp
- W94AD6KBHX5I
- Winbond
-
1:
NT$1,585.65
-
450庫存量
-
NRND
|
Mouser 元件編號
454-W94AD6KBHX5I
NRND
|
Winbond
|
DRAM 1Gb LPDDR, x16, 200MHz, Ind temp
|
|
450庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM Mobile - LPDDR
|
1 Gbit
|
16 bit
|
200 MHz
|
VFBGA-60
|
64 M x 16
|
6.5 ns
|
1.7 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
W94AD6KB
|
Tray
|
|
|
|
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die
- AS4C8M16D1A-5TCN
- Alliance Memory
-
1:
NT$492.94
-
174庫存量
|
Mouser 元件編號
913-4C8M16D1A-5TCN
|
Alliance Memory
|
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die
|
|
174庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR
|
128 Mbit
|
16 bit
|
200 MHz
|
TSOP-II-66
|
8 M x 16
|
700 ps
|
2.3 V
|
2.7 V
|
0 C
|
+ 70 C
|
AS4C8M16D1A
|
Tray
|
|
|
|
DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS
- IS66WVQ16M4FBLL-200BLI
- ISSI
-
1:
NT$272.46
-
369庫存量
|
Mouser 元件編號
870-VQ16M4DBLL200BLI
|
ISSI
|
DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS
|
|
369庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM
|
64 Mbit
|
|
200 MHz
|
TFBGA-24
|
|
|
2.7 V
|
3.6 V
|
|
|
|
|
|
|
|
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tray
- AS4C32M16D1-5BAN
- Alliance Memory
-
1:
NT$1,022.44
-
101庫存量
|
Mouser 元件編號
913-AS4C32M16D1-5BAN
|
Alliance Memory
|
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tray
|
|
101庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR
|
512 Mbit
|
16 bit
|
200 MHz
|
FBGA-60
|
32 M x 16
|
700 ps
|
2.3 V
|
2.7 V
|
- 40 C
|
+ 105 C
|
AS4C32M16D1
|
Tray
|
|
|
|
DRAM 512Mb LPDDR, x32, 200MHz
- W949D2DBJX5E
- Winbond
-
1:
NT$1,050.41
-
63庫存量
-
NRND
|
Mouser 元件編號
454-W949D2DBJX5E
NRND
|
Winbond
|
DRAM 512Mb LPDDR, x32, 200MHz
|
|
63庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM Mobile - LPDDR
|
512 Mbit
|
32 bit
|
200 MHz
|
VFBGA-90
|
16 M x 32
|
6.5 ns
|
1.7 V
|
1.95 V
|
- 25 C
|
+ 85 C
|
W949D2DB
|
Tray
|
|
|
|
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industriall Temp A Die
- AS4C8M16D1A-5TIN
- Alliance Memory
-
1:
NT$532.37
-
108庫存量
|
Mouser 元件編號
913-4C8M16D1A-5TIN
|
Alliance Memory
|
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industriall Temp A Die
|
|
108庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR
|
128 Mbit
|
16 bit
|
200 MHz
|
TSOP-II-66
|
8 M x 16
|
700 ps
|
2.3 V
|
2.7 V
|
- 40 C
|
+ 85 C
|
AS4C8M16D1A
|
Tray
|
|
|
|
DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A)
- AS4C4M16D1A-5TCN
- Alliance Memory
-
1:
NT$413.35
-
189庫存量
|
Mouser 元件編號
913-4C4M16D1A-5TCN
|
Alliance Memory
|
DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A)
|
|
189庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR
|
64 Mbit
|
16 bit
|
200 MHz
|
TSOP-II-66
|
4 M x 16
|
700 ps
|
2.3 V
|
2.7 V
|
0 C
|
+ 70 C
|
AS4C4M16D1A
|
Tray
|
|
|
|
DRAM DDR1, 64MB, 2M X 32, 2.5V 144 BGA 200MHZ, COMMERCIAL TEMP - Tray
- AS4C2M32D1A-5BCN
- Alliance Memory
-
1:
NT$506.56
-
159庫存量
|
Mouser 元件編號
913-AS4C2M32D1A-5BCN
|
Alliance Memory
|
DRAM DDR1, 64MB, 2M X 32, 2.5V 144 BGA 200MHZ, COMMERCIAL TEMP - Tray
|
|
159庫存量
|
|
最少： 1
倍數： 1
|
|
|
SDRAM - DDR
|
64 Mbit
|
32 bit
|
200 MHz
|
FBGA-144
|
2 M x 32
|
700 ps
|
2.3 V
|
2.7 V
|
0 C
|
+ 70 C
|
|
Tray
|
|
|
|
DRAM 256Mb 200MHz 18V ITemp Suggested Alt APS256XXN-OB9-BG same device higher speed
- APS256XXN-OBR-BG
- AP Memory
-
1:
NT$265.29
-
14,636庫存量
-
NRND
|
Mouser 元件編號
878-APS256XXN-OBR-BG
NRND
|
AP Memory
|
DRAM 256Mb 200MHz 18V ITemp Suggested Alt APS256XXN-OB9-BG same device higher speed
|
|
14,636庫存量
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
256 Mbit
|
8 bit / 16 bit
|
200 MHz
|
BGA-24
|
32 M x 8/16 M x 16
|
6.5 ns
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM IoT RAM 256Mb OPI x8,x16 DDR 200MHz, 1.8V Temp BGA24 suggested alt APS256XXN-OB9X-BG same device higher speed
- APS256XXN-OBRX-BG
- AP Memory
-
1:
NT$264.93
-
3,213庫存量
-
NRND
|
Mouser 元件編號
878-APS256XXNOBRX-BG
NRND
|
AP Memory
|
DRAM IoT RAM 256Mb OPI x8,x16 DDR 200MHz, 1.8V Temp BGA24 suggested alt APS256XXN-OB9X-BG same device higher speed
|
|
3,213庫存量
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
256 Mbit
|
8 bit / 16 bit
|
200 MHz
|
BGA-24
|
32 M x 8/16 M x 16
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM 512Mb 200MHz 18V ITemp Suggested Alt APS512XXN-OB9-BG same device higher speed
- APS512XXN-OBR-BG
- AP Memory
-
1:
NT$424.11
-
3,557庫存量
-
1,889預期2027/1/21
-
NRND
|
Mouser 元件編號
878-APS512XXN-OBR-BG
NRND
|
AP Memory
|
DRAM 512Mb 200MHz 18V ITemp Suggested Alt APS512XXN-OB9-BG same device higher speed
|
|
3,557庫存量
1,889預期2027/1/21
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
512 Mbit
|
8 bit / 16 bit
|
200 MHz
|
BGA-24
|
64 M x 8/32 M x 16
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S70KL1282GABHV020
- S70KL1282GABHV020
- Infineon Technologies
-
1:
NT$779.74
-
3,371庫存量
-
壽命結束
|
Mouser 元件編號
727-S70KL1282GABHV2
壽命結束
|
Infineon Technologies
|
DRAM SPCM
|
|
3,371庫存量
|
|
最少： 1
倍數： 1
|
|
|
HyperRAM
|
128 Mbit
|
8 bit
|
200 MHz
|
|
16 M x 8
|
35 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 105 C
|
|
Tray
|
|
|
|
DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
- IS66WVO8M8FALL-200BLI
- ISSI
-
1:
NT$253.46
-
885庫存量
|
Mouser 元件編號
870-WVO8M8FALL200BLI
|
ISSI
|
DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
|
|
885庫存量
|
|
最少： 1
倍數： 1
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
200 MHz
|
TFBGA-24
|
8 M x 8
|
5 ns
|
1.7 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM SPCM
- S80KS2563GABHI020
- Infineon Technologies
-
1:
NT$806.63
-
289庫存量
-
338在途量
|
Mouser 元件編號
727-S80KS2563GABHI02
|
Infineon Technologies
|
DRAM SPCM
|
|
289庫存量
338在途量
|
|
最少： 1
倍數： 1
|
|
|
HyperRAM
|
256 Mbit
|
|
200 MHz
|
FBGA-24
|
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM SPCM
- S80KS5123GABHI020
- Infineon Technologies
-
1:
NT$1,068.69
-
284庫存量
-
338在途量
|
Mouser 元件編號
727-S80KS5123GABHI02
|
Infineon Technologies
|
DRAM SPCM
|
|
284庫存量
338在途量
|
|
最少： 1
倍數： 1
|
|
|
HyperRAM
|
512 Mbit
|
|
200 MHz
|
FBGA-24
|
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
