SMD/SMT DRAM

結果: 1,955
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 存儲容量 數據匯流排寬度 最高時鐘頻率 封裝/外殼 組織 存取時間 電源電壓 - 最小值 電源電壓 - 最大值 最低工作溫度 最高工作溫度 系列 封裝
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, IT
5,146在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J
ISSI DRAM 1G, 1.8V, DDR2, 64Mx16, 400Mhz at CL5, 84 ball BGA (8mmx12.5mm) RoHS, IT, T&R
2,500預期2027/8/10
最少: 1
倍數: 1
: 2,500

SDRAM - DDR2 1 Gbit 16 bit 400 MHz BGA-84 64 M x 16 1.7 V 1.9 V - 40 C + 85 C IS43DR16640B Reel, Cut Tape, MouseReel
ISSI DRAM DDR2,2G,1.8V, RoHs 400MHz,128Mx16
2,726在途量
最少: 1
倍數: 1

SDRAM - DDR2 2 Gbit 16 bit 400 MHz BGA-84 128 M x 16 400 ps 1.7 V 1.9 V 0 C + 85 C IS43DR16128C
ISSI DRAM 1G (64Mx16) 400MHz 1.8v DDR2 SDRAM
2,258在途量
最少: 1
倍數: 1

SDRAM - DDR2 1 Gbit 16 bit 400 MHz BGA-84 64 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16640B Tray
ISSI DRAM DDR2,1G,1.8V, RoHs 400MHz, 64Mx16
23,327在途量
最少: 1
倍數: 1

SDRAM - DDR2 1 Gbit 16 bit 400 MHz BGA-84 64 M x 16 400 ps 1.7 V 1.9 V 0 C + 85 C IS43DR16640C Tray
ISSI DRAM 4G, 1.2V, DDR4, 256Mx16, 2400MT/s at 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS, IT
6,732在途量
最少: 1
倍數: 1

SDRAM - DDR4 4 Gbit 16 bit 1.2 GHz BGA-96 256 M x 16 1.14 V 1.26 V - 40 C + 95 C IS43QR16256B Tray
ISSI DRAM 8G, 1.2V, DDR4, 512Mx16, 2666MT/s at 19-19-19, 96 ball BGA (10mm x14mm) RoHS
544在途量
最少: 1
倍數: 1

SDRAM - DDR4 8 Gbit 16 bit BGA-96 512 M x 16 18 ns 1.14 V 1.26 V 0 C + 95 C
ISSI DRAM 4G, 1.5V, DDR3, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS
2,660在途量
最少: 1
倍數: 1

SDRAM - DDR3 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 20 ns 1.425 V 1.575 V 0 C + 95 C IS43TR16256B
ISSI DRAM 4G, 1.5V, DDR3, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS, IT
25,002在途量
最少: 1
倍數: 1

SDRAM - DDR3 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR16256B Tray
ISSI DRAM 4G, 1.5V, DDR3, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS, T&R
4,500在途量
最少: 1
倍數: 1
: 1,500

SDRAM - DDR3 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 1.425 V 1.575 V 0 C + 95 C IS43TR16256B Reel, Cut Tape, MouseReel
ISSI DRAM 4G, 1.35V, DDR3L, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS
11,330在途量
最少: 1
倍數: 1

SDRAM - DDR3L 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 20 ns 1.425 V 1.575 V 0 C + 95 C IS43TR16256BL Tray
ISSI DRAM 2G, 1.35V, DDR3L, 256Mx8, 1600MT/s at 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
7,807預期2027/7/29
最少: 1
倍數: 1

SDRAM - DDR3L 2 Gbit 8 bit BGA-78 256 M x 8 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR82560DL
ISSI DRAM 2G 128Mx16 1866MT/s 1.35V DDR3L I-Temp
2,089在途量
最少: 1
倍數: 1

SDRAM - DDR3L 2 Gbit 16 bit 933 MHz BGA-96 128 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR16128DL Tray
ISSI DRAM 2G 128Mx16 1866MT/s 1.35V DDR3L I-Temp
1,500預期2026/12/28
最少: 1
倍數: 1
: 1,500

SDRAM - DDR3L 2 Gbit 16 bit 933 MHz BGA-96 128 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR16128DL Reel, Cut Tape, MouseReel
ISSI DRAM 8G 512Mx16 1866MT/s 1.5V DDR3 I-Temp
8,786在途量
最少: 1
倍數: 1

SDRAM - DDR3 8 Gbit 16 bit 933 MHz FBGA-96 512 M x 16 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR16512B Tray
ISSI DRAM DDR3 8G 1.5V 512Mx16 1600MT/s IT
2,040預期2027/2/12
最少: 1
倍數: 1

SDRAM - DDR3 8 Gbit 16 bit 800 MHz FBGA-96 512 M x 16 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR16512B
ISSI DRAM 8G 512Mx16 1866MT/s 1.35V DDR3L I-Temp
8,568在途量
最少: 1
倍數: 1

SDRAM - DDR3L 8 Gbit 16 bit 933 MHz FBGA-96 512 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR16512BL Tray
ISSI DRAM DDR3 8G 1.35V 512Mx16 1600MT/s IT
8,656在途量
最少: 1
倍數: 1

SDRAM - DDR3L 8 Gbit 16 bit 800 MHz FBGA-96 512 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR16512BL Tray
ISSI DRAM Automotive (Tc: -40 to +105C) 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT
855預期2027/8/18
最少: 1
倍數: 1

SDRAM - LPDDR2 4 Gb 4 bit 533 MHz BGA-168 128 M x 32 10 ns 1.7 V 1.95 V - 40 C + 105 C
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 1.5V, DDR4, 256Mx16, 2400MT/s at 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS
4,923在途量
最少: 1
倍數: 1

SDRAM - DDR4 4 Gbit 16 bit 1.2 GHz FBGA-96 256 M x 16 19 ns 1.14 V 1.26 V - 40 C + 105 C
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 1.35V, DDR3L, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x 13mm) RoHS
5,686在途量
最少: 1
倍數: 1

SDRAM - DDR3L 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 20 ns 1.283 V 1.45 V - 40 C + 105 C IS46TR16256BL
ISSI DRAM 1G (64Mx16) 333MHz 1.8v DDR2 SDRAM
5,517在途量
最少: 1
倍數: 1

SDRAM - DDR2 1 Gbit 16 bit 333 MHz BGA-84 64 M x 16 450 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16640B Tray
ISSI DRAM 256M, 3.3V, SDRAM 16Mx16, 166MHz
5,832在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160J Tray
ISSI DRAM 256M, 3.3V, SDRAM 16Mx16, 166MHz
3,672在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160J
ISSI DRAM 256M, 3.3V, SDRAM 16Mx16 143MHz
4,968在途量
最少: 1
倍數: 1

SDRAM 16 Mbit 16 bit 143 MHz TSOP-II-54 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160J