ISSI SRAM

結果: 1,007
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ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8 mm), ERR1/2 Pins, RoHS, Automotive temp 無庫存前置作業時間 14 週
最少: 480
倍數: 480

8 Mbit 512 k x 16 10 ns Serial 3.6 V 2.4 V 110 mA, 135 mA - 40 C + 125 C SMD/SMT BGA-48
ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS, Automotive temp 無庫存前置作業時間 14 週
最少: 480
倍數: 480

8 Mbit 512 k x 16 10 ns Serial 3.6 V 2.4 V 110 mA, 135 mA - 40 C + 125 C SMD/SMT BGA-48
ISSI SRAM 18Mb, QUADP (Burst of 2), Sync SRAM, 512K x 36, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

18 Mbit 512 k x 36 333 MHz Parallel 1.9 V 1.7 V 1.2 A 0 C + 70 C SMD/SMT FBGA-165 Tray
ISSI SRAM 2Mb,High-Speed,Async with ECC,256K x 8,10ns,2.4V-3.6V, 36 Ball mBGA (6x8mm), RoHS 暫無庫存
最少: 2,500
倍數: 2,500
: 2,500

2 Mbit 256 k x 8 10 ns Parallel 3.6 V 2.4 V 50 mA - 40 C + 85 C SMD/SMT TFBGA-36 Reel
ISSI SRAM 18Mb, QUADP (Burst of 2), Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

18 Mbit 1 M x 18 333 MHz Parallel 1.9 V 1.7 V 1.15 A 0 C + 70 C SMD/SMT FBGA-165 Tray
ISSI SRAM 36Mb, QUADP (Burst of 2), Sync SRAM, 1M x 36, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

36 Mbit 1 M x 36 333 MHz Parallel 1.9 V 1.7 V 1.2 A 0 C + 70 C SMD/SMT FBGA-165 Tray
ISSI SRAM 36Mb, QUADP (Burst of 2), Sync SRAM, 2M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

36 Mbit 2 M x 18 333 MHz Parallel 1.9 V 1.7 V 1.15 A 0 C + 70 C SMD/SMT FBGA-165 Tray
ISSI SRAM 72Mb, QUADP (Burst of 2), Sync SRAM, 2M x 36, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

72 Mbit 2 M x 36 333 MHz Parallel 1.9 V 1.7 V 1.2 A 0 C + 70 C SMD/SMT FBGA-165 Tray
ISSI SRAM 72Mb, QUADP (Burst of 2), Sync SRAM, 4M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

72 Mbit 4 M x 18 333 MHz Parallel 1.9 V 1.7 V 1.15 A 0 C + 70 C SMD/SMT FBGA-165 Tray
ISSI SRAM 36Mb 2Mx18 333Mhz QUAD Sync SRAM 無庫存前置作業時間 30 週
最少: 105
倍數: 105

36 Mbit 2 M x 18 333 MHz Parallel 1.9 V 1.7 V 800 mA - 40 C + 85 C SMD/SMT FBGA-165 Tray
ISSI SRAM 18Mb, QUAD (Burst of 4), Sync SRAM, 512K x 36, 2.5 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

18 Mbit 512 k x 36 400 MHz Parallel 1.9 V 1.7 V 1.3 A - 40 C + 85 C SMD/SMT FBGA-165 Tray
ISSI SRAM 18Mb (512Kx36) Sync SRAM 2.5v 無庫存前置作業時間 26 週
最少: 2,000
倍數: 2,000
: 2,000

18 Mbit 512 k x 36 3.1 ns 200 MHz Parallel 2.625 V 2.375 V 475 mA - 40 C + 85 C SMD/SMT FBGA-165 Reel
ISSI SRAM 36Mb, QUAD (Burst of 2), Sync SRAM, 2M x 18, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

36 Mbit 2 M x 18 250 MHz Parallel 1.9 V 1.7 V 1.15 A - 40 C + 85 C SMD/SMT FBGA-165 Tray
ISSI SRAM 18Mb, QUAD (Burst of 2), Sync SRAM, 512K x 36, 2.5 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

18 Mbit 512 k x 36 333 MHz Parallel 1.9 V 1.7 V 1.2 A 0 C + 70 C SMD/SMT FBGA-165 Tray
ISSI SRAM 72Mb, QUAD (Burst of 4), Sync SRAM, 2M x 36, 2.5 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

72 Mbit 2 M x 36 400 MHz Parallel 1.9 V 1.7 V 1.3 A - 40 C + 85 C SMD/SMT FBGA-165 Tray

ISSI SRAM 4Mb,High-Speed,Low Power,Async,512K x 8,25ns,5v,32 Pin TSOP II, RoHS 無庫存前置作業時間 20 週
最少: 1,000
倍數: 1,000
: 1,000

4 Mbit 512 k x 8 25 ns Parallel 5.5 V 4.5 V 15 mA - 40 C + 85 C SMD/SMT TSOP-32 Reel
ISSI SRAM 18Mb, QUADP (Burst of 4), Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS 無庫存前置作業時間 30 週
最少: 105
倍數: 105

18 Mbit 1 M x 18 400 MHz Parallel 1.9 V 1.7 V 1.15 A 0 C + 70 C SMD/SMT FBGA-165 Tray
ISSI SRAM 72Mb, QUAD (Burst of 4), Sync SRAM, 4M x 18, 165 Ball FBGA (15x17 mm) 無庫存前置作業時間 30 週
最少: 105
倍數: 105

72 Mbit 4 M x 18 300 MHz Parallel 1.9 V 1.7 V 800 mA 0 C + 70 C SMD/SMT FBGA-165 Tray
ISSI SRAM 18Mb,Flow-Through,Sync,1Mb x 18,6.5ns,3.3v or 2.5V I/O,100 Pin TQFP, RoHS 無庫存前置作業時間 26 週
最少: 72
倍數: 72

18 Mbit 1 M x 18 6.5 ns 133 MHz Parallel 3.465 V 3.135 V 250 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
ISSI SRAM 18Mb,Flow-Through,Sync,1Mb x 18,6.5ns,3.3v or 2.5V I/O,100 Pin TQFP, RoHS 無庫存前置作業時間 26 週
最少: 800
倍數: 800
: 800

18 Mbit 1 M x 18 6.5 ns 133 MHz Parallel 3.465 V 3.135 V 250 mA 0 C + 70 C SMD/SMT TQFP-100 Reel
ISSI SRAM 18M (1Mx18) 7.5ns Sync SRAM 3.3v 無庫存前置作業時間 26 週
最少: 72
倍數: 72

18 Mbit 1 M x 18 7.5 ns 117 MHz Parallel 3.465 V 3.135 V 250 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
ISSI SRAM 18Mb,Flow-Through,Sync,1M x 18,6.5ns,3.3v I/O, 100Pin TQFP, RoHS 無庫存前置作業時間 26 週
最少: 72
倍數: 72

18 Mbit 1 M x 18 6.5 ns 133 MHz Parallel 3.465 V 2.375 V 260 mA - 40 C + 85 C SMD/SMT TQFP-100
ISSI SRAM 18Mb,Flow-Through,Sync,1M x 18,6.5ns,3.3v I/O, 100Pin TQFP, RoHS 無庫存前置作業時間 26 週
最少: 800
倍數: 800
: 800

18 Mbit 1 M x 18 6.5 ns 133 MHz Parallel 3.465 V 2.375 V 260 mA - 40 C + 85 C SMD/SMT TQFP-100 Reel
ISSI SRAM 18Mb,Flow-Through,Sync,1M x 18,7.5ns,3.3v I/O, 100Pin TQFP, RoHS 無庫存前置作業時間 26 週
最少: 800
倍數: 800
: 800

18 Mbit 1 M x 18 7.5 ns 117 MHz Parallel 3.465 V 3.135 V 210 mA - 40 C + 85 C SMD/SMT QFP-100 Reel
ISSI SRAM 36Mb,Flow-Through,Sync,1Mb x 36,7.5ns,3.3V I/O,100 Pin TQFP, RoHS 無庫存前置作業時間 26 週
最少: 1
倍數: 1

36 Mbit 1 M x 36 7.5 ns 117 MHz Parallel 3.465 V 2.375 V 300 mA - 40 C + 85 C SMD/SMT TQFP-100