|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCTHC250N120G3AG
- STMicroelectronics
-
1:
NT$2,752.92
-
32庫存量
-
新產品
|
Mouser 元件編號
511-SCTHC250N120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
|
|
32庫存量
|
|
|
NT$2,752.92
|
|
|
NT$2,182.19
|
|
|
NT$1,862.05
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
STPAK-4
|
1 Channel
|
1.2 kV
|
239 A
|
8.5 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
304 nC
|
- 55 C
|
+ 200 C
|
994 W
|
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
NT$652.47
-
2,309庫存量
|
Mouser 元件編號
511-SCTL35N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,309庫存量
|
|
|
NT$652.47
|
|
|
NT$463.18
|
|
|
NT$402.95
|
|
|
NT$342.01
|
|
|
NT$329.10
|
|
最少： 1
倍數： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
NT$793.00
-
7庫存量
-
600預期2027/2/5
-
新產品
|
Mouser 元件編號
511-SCT019HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
7庫存量
600預期2027/2/5
|
|
|
NT$793.00
|
|
|
NT$568.22
|
|
|
NT$500.11
|
|
|
NT$459.24
|
|
最少： 1
倍數： 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
NT$795.87
-
630庫存量
|
Mouser 元件編號
511-SCT012W90G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
630庫存量
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP247-3
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
NT$923.85
-
540庫存量
|
Mouser 元件編號
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
540庫存量
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
NT$669.68
-
448庫存量
|
Mouser 元件編號
511-SCT018W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
448庫存量
|
|
|
NT$669.68
|
|
|
NT$435.22
|
|
|
NT$405.11
|
|
|
NT$358.86
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
NT$725.25
-
256庫存量
-
600在途量
|
Mouser 元件編號
511-SCT020W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
256庫存量
600在途量
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
Hip247-4
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
NT$679.36
-
247庫存量
-
600預期2027/3/12
|
Mouser 元件編號
511-SCT025W120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
247庫存量
600預期2027/3/12
|
|
|
NT$679.36
|
|
|
NT$422.67
|
|
|
NT$396.50
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP247-3
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
NT$487.92
-
596庫存量
-
1,000在途量
|
Mouser 元件編號
511-SCT027H65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
596庫存量
1,000在途量
|
|
|
NT$487.92
|
|
|
NT$277.48
|
|
|
NT$276.76
|
|
|
NT$261.71
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
NT$506.92
-
246庫存量
|
Mouser 元件編號
511-SCT027W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
246庫存量
|
|
|
NT$506.92
|
|
|
NT$339.50
|
|
|
NT$314.76
|
|
|
NT$267.80
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
NT$416.94
-
487庫存量
|
Mouser 元件編號
511-SCT040W65G3-4
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
487庫存量
|
|
|
NT$416.94
|
|
|
NT$228.36
|
|
|
NT$212.95
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP247-4
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
NT$481.11
-
481庫存量
|
Mouser 元件編號
511-SCT040W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481庫存量
|
|
|
NT$481.11
|
|
|
NT$321.22
|
|
|
NT$298.27
|
|
|
NT$257.04
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP247-4
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
NT$328.03
-
1,404庫存量
|
Mouser 元件編號
511-SCT055TO65G3
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,404庫存量
|
|
|
NT$328.03
|
|
|
NT$179.61
|
|
|
NT$168.14
|
|
|
NT$155.59
|
|
|
NT$155.59
|
|
最少： 1
倍數： 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
NT$594.03
-
22庫存量
-
1,000預期2027/1/29
|
Mouser 元件編號
511-SCT018H65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
22庫存量
1,000預期2027/1/29
|
|
|
NT$594.03
|
|
|
NT$419.09
|
|
|
NT$357.07
|
|
|
NT$333.41
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
NT$756.44
-
13庫存量
-
1,200在途量
|
Mouser 元件編號
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
13庫存量
1,200在途量
在途量:
600 預期2027/5/21
600 預期2027/6/18
|
|
|
NT$756.44
|
|
|
NT$521.98
|
|
|
NT$476.45
|
|
|
NT$438.09
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
NT$504.41
-
109庫存量
-
600預期2026/9/7
|
Mouser 元件編號
511-SCT040W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
109庫存量
600預期2026/9/7
|
|
|
NT$504.41
|
|
|
NT$372.84
|
|
|
NT$305.44
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
NT$497.96
-
33庫存量
-
600預期2027/5/7
|
Mouser 元件編號
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
33庫存量
600預期2027/5/7
|
|
|
NT$497.96
|
|
|
NT$349.90
|
|
|
NT$267.08
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-3
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
NT$540.98
-
35庫存量
-
1,200預期2027/1/29
|
Mouser 元件編號
511-SCT070W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
35庫存量
1,200預期2027/1/29
|
|
|
NT$540.98
|
|
|
NT$405.82
|
|
|
NT$256.33
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
NT$434.14
-
727庫存量
|
Mouser 元件編號
511-SCT040H65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
727庫存量
|
|
|
NT$434.14
|
|
|
NT$244.14
|
|
|
NT$237.69
|
|
|
NT$224.78
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
NT$613.39
-
334庫存量
|
Mouser 元件編號
511-SCT20N120AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
334庫存量
|
|
|
NT$613.39
|
|
|
NT$434.86
|
|
|
NT$323.73
|
|
|
NT$290.39
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
NT$1,118.52
-
1,301庫存量
|
Mouser 元件編號
511-SCTL90N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,301庫存量
|
|
|
NT$1,118.52
|
|
|
NT$799.81
|
|
|
NT$799.46
|
|
|
NT$757.51
|
|
|
NT$757.51
|
|
最少： 1
倍數： 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
NT$815.95
-
5庫存量
-
1,200在途量
-
新產品
|
Mouser 元件編號
511-SCT020HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
5庫存量
1,200在途量
在途量:
600 預期2027/2/19
600 預期2027/3/5
|
|
|
NT$815.95
|
|
|
NT$609.45
|
|
|
NT$514.45
|
|
|
NT$466.05
|
|
最少： 1
倍數： 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
NT$367.46
-
14庫存量
-
1,800預期2027/1/29
|
Mouser 元件編號
511-SCT040TO65G3
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
14庫存量
1,800預期2027/1/29
|
|
|
NT$367.46
|
|
|
NT$258.84
|
|
|
NT$192.16
|
|
|
NT$179.25
|
|
|
NT$179.25
|
|
最少： 1
倍數： 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
1 Channel
|
650 V
|
35 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
42.5 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
NT$538.83
-
5庫存量
-
600預期2027/4/16
|
Mouser 元件編號
511-SCT055W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
5庫存量
600預期2027/4/16
|
|
|
NT$538.83
|
|
|
NT$410.48
|
|
|
NT$367.46
|
|
|
NT$297.91
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
NT$485.05
-
14庫存量
|
Mouser 元件編號
511-SCT070H120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
14庫存量
|
|
|
NT$485.05
|
|
|
NT$281.78
|
|
|
NT$262.78
|
|
|
NT$248.80
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
臺灣