Infineon Technologies IRF540N/Z Advanced HEXFET® Power MOSFETs
Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Fully avalanche rated
- Lead-free
Applications
- AC-DC
- Appliances
- Audio
- Industrial
- Lighting
View Results ( 4 ) Page
| 零件編號 | 規格書 | Id - C連續漏極電流 | Rds On - 漏-源電阻 | Pd - 功率消耗 |
|---|---|---|---|---|
| IRF540NSTRLPBF |  |
33 A | 44 mOhms | 3.8 W |
| IRF540ZPBF | |
36 A | 26.5 mOhms | 92 W |
| IRL540NSTRLPBF | |
36 A | 63 mOhms | 3.8 W |
| IPI086N10N3 G | |
80 A | 8.2 mOhms | 125 W |
發佈日期: 2014-08-07
| 更新日期: 2022-03-11