IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs
IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.
These through-hole IGBTs also offer square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 1200V, making them ideal for snubber-less hard-switching applications. The ultra low-Vsat IGBT provides up to 5kHz switching. The IXYS XPT 4th Generation Trench IGBTs include a positive collector-to-emitter voltage temperature coefficient. This allows designers to use multiple devices in parallel to meet high current requirements and low gate charges, which help reduce gate drive requirements and switching losses.
Typical applications include battery chargers, lamp ballasts, motor drives, power inverters, power factor correction (PFC) circuits, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and welding machines.
Features
- Developed using proprietary XPT thin-wafer technology and state-of-the-art 4th generation (GenX4™) trench IGBT process
- Low on-state voltages - VCE(sat)
- Up to 5kHz switching
- Positive thermal coefficient of VCE(sat)
- Optimized for high-speed switching (up to 60kHz)
- Short circuit capability (10µs)
- Square RBSOA
- Ultra-fast anti-parallel diodes (Sonic-FRD™)
- Hard-switching capabilities
- High power densities
- Temperature stability of diode forward voltage VF
- Low gate drive requirements
- International standard packages
Applications
- Battery chargers
- Lamp ballasts
- Motor drives
- Power inverters
- PFC circuits
- SMPS
- UPS
- Welding machines
Specifications
- Common
- 1200V VCES
- 20A IC110
- IXYA20N120A4HV
- ≤1.9V VCE(sat)
- 160ns tfi(typ)
- IXYA20N120B4HV
- ≤2.1V VCE(sat)
- 90ns tfi(typ)
- IXYA20N120C4HV
- ≤2.5V VCE(sat)
- 58ns tfi(typ)
Videos
Related IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs
Designed to minimize conduction and switching losses, especially in hard-switching applications.
IXYS XPT™ GenX5™ Trench IGBTs
5th gen Trench IGBTs with square Reverse Bias Safe Operating Areas and a 650V breakdown voltage.
IXYS IXYx110N120A4 1200V XPT™ GenX4™ Trench IGBTs
Offers an ultra-low Vsat designed for switching up to 5kHz.
| 零件編號 | 規格書 | 說明 | Pd - 功率消耗 | 集電極最大連續電流Ic | 柵射極漏電電流 | 集電極-發射極飽和電壓 |
|---|---|---|---|---|---|---|
| IXYH100N65C5 |  |
IGBT 650V, 100A, XPT Gen5 C5 IGBT in TO-247AD | 750 W | 230 A | 100 nA | 1.68 V |
| IXYA50N65C5 | |
IGBT 650V, 50A, XPT Gen5 C5 IGBT in TO-263 | 650 W | 110 A | 100 nA | 1.67 V |
| IXYP48N65A5 | |
IGBT 650V, 48A, XPT Gen5 A5 IGBT in TO-220 | 326 W | 130 A | 100 nA | 1.27 V |
| IXYA48N65A5 | |
IGBT 650V, 48A, XPT Gen5 A5 IGBT in TO-263 | 326 W | 130 A | 100 nA | 1.27 V |
| IXYA55N65B5 | |
IGBT 650V, 55A, XPT Gen5 B5 IGBT in TO-263 | 395 W | 122 A | 100 nA | 1.3 V |
| IXYH85N120A4 | |
IGBT TO247 1200V 85A XPT | 1.15 kW | 520 A | 100 nA | 1.8 V |
| IXYK140N120A4 | |
IGBT TO264 1200V 140A GENX4 | 1.5 kW | 480 A | 200 nA | 1.7 V |
| IXXX160N65B4 | |
IGBT 650V/310A TRENCH IGBT GENX4 XPT | 940 W | 160 A | 200 nA | 1.8 V |
| IXXH110N65C4 | |
IGBT 650V/234A TRENCH IGBT GENX4 XPT | 880 W | 110 A | 100 nA | 2.35 V |
| IXXH80N65B4 | |
IGBT 650V/160A TRENCH IGBT GENX4 XPT | 625 W | 80 A | 100 nA | 2.1 V |