Diodes Incorporated Schottky SBR® Super Barrier Rectifiers
Diodes Inc. Schottky SBR® Super Barrier Rectifiers are Schottky rectifiers that utilize an MOS manufacturing process. This creates a superior two-terminal device that has a lower forward voltage (VF) than comparable Schottky diodes. They possess the thermal stability and high-reliability characteristics of PN epitaxial diodes.
SBR diodes are designed for high power, low loss and fast switching applications. A MOS channel within its structure forms a low potential barrier for the majority carriers, thus SBR's forward bias operation at low voltage is similar to Schottky diode. However, the leakage current is lower than Schottky diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.
Features
- Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation
- Reduced high-temperature reverse leakage; increased reliability against thermal runaway failure in high-temperature operation
- Low power loss, high efficiency
- Low reverse leakage current
Applications
- Switch Mode Power Supplies (SMPS)
- Buck/boost diodes for DC-DC conversion
- Battery chargers
- Reverse polarity protection
- Solar panels
- LED Lighting
- Automotive applications
Related Products
Diodes Incorporated SBRFP10U60D1 SBR® (Super Barrier Rectifier) Diode
10A SBR Diode is ideally suited for applications requiring ultra-low blocking mode.
Diodes Incorporated SBRT15U50SP5 Trench Super Barrier Rectifier
Provides excellent low reverse leakage stability at high temperatures.
Diodes Incorporated SBRT20U50SLP 20A Trench Super Barrier Rectifier
Provides very low VF and excellent reverse leakage stability at high temperatures.
| 零件編號 | 規格書 | 封裝/外殼 | If - 順向電流 | Vrrm - 重複反向電壓 |
|---|---|---|---|---|
| SBRT20U50SLP-13 |  |
PowerDI5060-8 | 20 A | 50 V |
| SBRT15U50SP5-13D | |
PowerDI5-3 | 15 A | 50 V |
| SBRT3M30LP-7 | |
U-DFN-3030-8 | 3 A | 30 V |