GeneSiC Semiconductor 3300V SiC MOSFETs
GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. The 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.
Features
- Softer RDS(ON) v/s temperature dependency
- LoRing™ - electromagnetically optimized design
- Smaller RG(INT) and lower QG
- Low device capacitances (COSS CRSS)
- Industry-leading UIL and short-circuit robustness
- Robust body diode with low VF and low QRR
- Normally off-stable temperature up to 175°C
- Optimized package with separate driver source pin
Applications
- Traction
- Solar string inverters
- EV- fast chargers
- Pulsed power
- Switched-mode power supply
- Energy storage
- Solid-state transformers
- Solid-state circuit breakers
Associated Products
GeneSiC Semiconductor SiC MOSFETs
Supported by fast turn-around high volume manufacturing further enhances their value proposition.
Navitas Semiconductor 具有GaNSense™技術的GanFast功率IC
包括用於高密度充電器/適配器應用的控制、驅動、感應和保護功能。
Package Styles
發佈日期: 2021-11-09
| 更新日期: 2023-02-22