Infineon Technologies F3L200R07W2S5FP EasyPACK™ IGBT Modules

Infineon Technologies F3L200R07W2S5FP EasyPACK™ IGBT Modules feature up to 650V increased blocking voltage capability and employ CoolSiC™ Schottky diode (gen5). These devices are based on TRENCHSTOP™ IGBT5  and PressFIT contact technology. The F3L200R07W2S5FP IGBT modules provide strongly reduced switching losses and an Al2O3 substrate with low thermal resistance. These modules come with a compact design comprising rugged mounting due to integrated mounting clamps and pre-applied thermal interface material. The F3L200R07W2S5FP IGBT modules are ideal for motor drives, solar applications, 3-level applications, and UPS systems.  

Features

  • CoolSiC Schottky diode (gen 5)
  • Increased blocking voltage capability up to 650V
  • Low switching losses
  • compact design
  • Al2Osubstrate with low thermal resistance
  • PressFIT contact technology
  • Rugged mounting due to integrated mounting clamps
  • Pre-applied thermal interface material

Applications

  • Motor drives
  • Solar
  • 3-level applications
  • UPS systems

Circuit Diagrams

Application Circuit Diagram - Infineon Technologies F3L200R07W2S5FP EasyPACK™ IGBT Modules
View Results ( 3 ) Page
零件編號 規格書 說明 產品類型 標準包裝數量
F3L200R07W2S5FB11BOMA1 F3L200R07W2S5FB11BOMA1 規格書 IGBT 模組 650 V, 200 A 3-level IGBT module IGBT Modules 15
F3L200R07W2S5FPB55BPSA1 IGBT 模組 650 V, 200 A 3-level IGBT module IGBT Modules 18
F3L200R07W2S5FPB56BPSA1 IGBT 模組 650 V, 200 A 3-level IGBT module IGBT Modules 18
發佈日期: 2020-05-11 | 更新日期: 2024-10-24