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Infineon Technologies OptiMOS™ 6 150V Power MOSFETs

Infineon Technologies OptiMOS™ 6 150V Power MOSFETs feature industry-leading low RDS(on), improved switching performance, and excellent EMI behavior, which contribute to unparalleled efficiency, power density, and reliability. The OptiMOS 6 technology offers significant improvements over its predecessor, OptiMOS 5, including up to 41% lower RDS(on), 20% lower FOMg, and 17% lower FOMgd. Additionally, these MOSFETs exhibit high avalanche ruggedness and a maximum junction temperature of +175°C, ensuring robust and stable operation in demanding environments. With a wide package portfolio, Infineon OptiMOS™ 6 150V Power MOSFETs are designed to meet the stringent requirements of both high and low-switching frequency applications, providing enhanced system reliability and a longer lifetime.

Features

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Enhanced robustness
  • Improved system reliability
  • Ulta-low drain-source on resistance [RDS(on)] - IPF036N15NM6, IPB038N15NM6, IPF048N15NM6, IPP038N15NM6, IPT034N15NM6, and IPTC034N15NM6
  • 20% lower Figure of Merit (FOMg) than OptiMOS 5 - IPB051N15NM6, IPB085N15NM6, IPB057N15NM6, IPP057N15NM6, IPT034N15NM6, IPT047N15NM6, IPTC034N15NM6, and ISC165N15NM6
  • High current rating - IPT034N15NM6, IPT047N15NM6, and IPTC034N15NM6
  • Top-side cooling - IPTC034N15NM6
  • Low reverse recovery charge (QRR) in 150V
  • Improved diode softness vs OptiMOS 5
  • High avalanche ruggedness
  • Tight Gate Threshold Voltage [VGS(the)] spread of ±500mV
  • D2PAK 3-pin, D2PAK 7-pin, TO-220, TOLL, TOLT (for top-side cooling), and SuperSO8 package options
  • +175°C maximum junction temperature
  • Moisture Sensitivity Level (MSL) 1
  • Halogen free and RoHS compliant

Applications

  • Light electric vehicles (LEV)
  • Motor control
  • Power tools
  • Energy storage systems
  • Power conversion
  • Photovoltaic applications
  • Industrial power supplies
  • Server power supply units (PSU)
  • Telecommunication infrastructures

Specifications

  • 50A to 194A continuous drain current range
  • 150V drain-source breakdown voltage
  • 4V gate-source threshold voltage
  • 95W to 294W power dissipation range
  • 7ns to 18ns typical turn-on delay time range
  • 9ns to 27ns typical turn-off delay time range
  • 2ns to 17ns rise time range
  • 8ns to 15ns fall time range
  • 19S to 70S minimum forward transconductance range
  • 14.8nC to 69nC gate charge range
  • 3.2mΩ to 15.6mΩ on-drain-source resistance range
  • -55°C to +175°C operating temperature range

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Additional Resources

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發佈日期: 2025-03-24 | 更新日期: 2025-07-17