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ISSI Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

ISSI Pseudo SRAM/CellularRAM Devices offer fast access, asynchronous, page, and burst functions for different application requirements. These devices support low voltage, which reduces overall power consumption, making them ideal for low-power, portable applications. ISSI Pseudo SRAM/CellularRAM are available in commercial, industrial, and automotive operating temperature ranges for design flexibility.

Features

  • 8Mb, 16Mb, 32Mb, and 64Mb densities available
  • Asynchronous, page, and burst features supported
  • BGA or KGD package types
  • Dual voltage rails for optional performance
  • High-speed access time
  • Burst mode for Read and Write operation
  • Low power consumption
  • Industrial, commercial, and automotive temperature ranges available

Applications

  • Mobile
  • Industrial
  • Automotive
  • Telecom
  • Networking
View Results ( 51 ) Page
零件編號 規格書 存儲容量 組織 存取時間 電源電壓 - 最大值 電源電壓 - 最小值 電源電流 - 最大值
IS66WVQ16M4FBLL-200BLI 64 Mbit 3.6 V 2.7 V
IS66WVR4M8ALL-104NLI IS66WVR4M8ALL-104NLI 規格書 32 Mbit 4 M x 8 7 ns 1.95 V 1.65 V 15 mA
IS66WV1M16EBLL-70BLI IS66WV1M16EBLL-70BLI 規格書 16 Mbit 1 M x 16 70 ns 3.6 V 2.5 V 28 mA
IS66WVE2M16EBLL-70BLI IS66WVE2M16EBLL-70BLI 規格書 32 Mbit 2 M x 16 70 ns 3.6 V 2.7 V 30 mA
IS66WVC4M16EALL-7010BLI IS66WVC4M16EALL-7010BLI 規格書 64 Mbit 4 M x 16 70 ns 1.95 V 1.7 V 30 mA
IS66WV51216EBLL-70TLI-TR IS66WV51216EBLL-70TLI-TR 規格書 8 Mbit 512 k x 16 70 ns 3.6 V 2.5 V 28 mA
IS67WVE4M16EBLL-70BLA1 IS67WVE4M16EBLL-70BLA1 規格書 64 Mbit 4 M x 16 70 ns 3.6 V 2.7 V 30 mA
IS66WVE2M16EALL-70BLI IS66WVE2M16EALL-70BLI 規格書 32 Mbit 2 M x 16 70 ns 1.95 V 1.7 V 30 mA
IS66WVE4M16EALL-70BLI IS66WVE4M16EALL-70BLI 規格書 64 Mbit 4 M x 16 70 ns 1.95 V 1.7 V 30 mA
IS66WV51216EBLL-55TLI IS66WV51216EBLL-55TLI 規格書 8 Mbit 512 k x 16 55 ns 3.6 V 2.5 V 28 mA
發佈日期: 2014-02-18 | 更新日期: 2024-03-05