MACOM CG2H40xx & CG2H30xx GaN HEMTs
MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.
Features
- Designed to operate from a 28V rail
- High efficiency
- High gain
- Wide bandwidth capabilities
- Rugged design for long, reliable operation
- Variety of package types
Applications
- Broadband amplifiers
- Cellular infrastructure
- Radars
- Test instrumentation
Specifications
- 120V at +25°C drain-source voltage (VDSS)
- -10V to +2V gate-to-source voltage (VGS)
- +225°C operating junction temperature (TJ)
- -40°C to +150°C case operating temperature range (TC)
Development Tools
MACOM CG2H40xx and CG2H30xx Test Boards provide a demonstration and evaluation platform for the CG2H40xx and CG2H30xx GaN HEMTs. Each provides an example amplifier circuit specifically tailored to the target device.
View Results ( 5 ) Page
| 零件編號 | 規格書 | 增益 | 輸出功率 |
|---|---|---|---|
| CG2H40010F |  |
16.5 dB | 10 W |
| CG2H30070F | |
12.4 dB | 70 W |
| CG2H40045F | |
16 dB | 45 W |
| CGHV40180F | |
20.3 dB | 180 W |
| CG2H40025F | |
15 dB | 25 W |
發佈日期: 2017-12-26
| 更新日期: 2024-01-19