Micro Commercial Components (MCC) SICW0x 1200V SiC N-Channel MOSFETs

Micro Commercial Components (MCC) SICW0x 1200V SiC N-Channel MOSFETs amplify performance in versatile TO-247-4, TO-247-4L, and TO-247AB packages. These MOSFETs feature high switching speed with low gate charge, design flexibility, and reliability. The SICW0x 1200V SiC MOSFETs include a 21mΩ to 120mΩ typical wide on-resistance range and reliable performance. These SiC MOSFETs deliver superior thermal properties and a fast intrinsic diode to ensure smooth, efficient operation in challenging conditions. The SICW0x SiC MOSFETs are available in 3-pin and 4-pin (Kelvin source) configurations. Typical applications include motor drives, welding equipment, power supplies, renewable energy systems, charging infrastructure, cloud systems, and Uninterruptible Power Supply (UPS).

Features

  • 1200V MOSFET with SiC technology
  • Superior thermal properties and low switching losses
  • Fast, reliable switching: Intrinsic body diode improves efficiency and ruggedness
  • Superior thermal properties and low switching losses
  • High switching speed with low gate charge
  • 21mΩ to 120mΩ (typical) wide on-resistance selection
  • Avalanche ruggedness
  • Available in 3-pin and 4-pin (Kelvin source) configurations 

Applications

  • Motor drives
  • Welding equipment
  • Power supplies
  • Renewable energy systems
  • Charging infrastructure
  • Uninterruptible Power Supply (UPS) systems
  • Cloud systems
Micro Commercial Components (MCC) SICW0x 1200V SiC N-Channel MOSFETs
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零件編號 規格書 封裝/外殼 互導 - 最小值 下降時間 Id - C連續漏極電流 Pd - 功率消耗 Qg - 閘極充電 Rds On - 漏-源電阻 上升時間 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓
SICW021N120P-BP SICW021N120P-BP 規格書 TO-247AB-3 24.4 S 14 ns 100 A 469 W 200 nC 33.6 mOhms 49 ns - 10 V, + 22 V 3 V
SICW021N120P4-BP SICW021N120P4-BP 規格書 TO-247-4 24.4 S 12 ns 100 A 469 W 200 nC 33.6 mOhms 29 ns - 10 V, + 22 V 3 V
發佈日期: 2024-08-13 | 更新日期: 2024-09-04