Nexperia 74HC1G00/74HCT1G00 2-Input NAND Gates
Nexperia 74HC1G00 and 74HCT1G00 2-Input NAND Gates are designed for a wide range of digital applications. These gates feature a wide supply voltage range, from 2.0V to 6.0V for the 74HC1G00 and 4.5V to 5.5V for the 74HCT1G00, making these Nexperia NAND gates suitable for various voltage environments. These devices offer high noise immunity and low power dissipation, ensuring reliable performance in complex circuits. The inputs include clamp diodes, which allow for the use of current-limiting resistors to interface with voltages higher than the supply voltage. These NAND gates are ideal for logic functions, signal inversion, timing circuits, control logic, and data storage applications.
Features
- Wide supply voltage ranges
- 2.0V to 6.0V for 74HC1G00
- 4.5V to 5.5V for 74HCT1G00
- CMOS low power dissipation
- Input levels
- CMOS level for 74HC1G00
- TTL level for 74HCT1G00
- Symmetrical output impedance
- High noise immunity
- Latch-up performance exceeds 100mA per JESD78 Class II Level B
- SOT353-1 (TSSOP5), SOT753 (SC-74A), and SOT8065-1 (XSON5) package options
- Balanced propagation delays
- ESD protection
- HBM exceeds 2000V per ANSI/ESDA/JEDEC JS-001 class 2
- CDM exceeds 1000V per ANSI/ESDA/JEDEC JS-002 class C3
- Complies with JEDEC standards
- JESD8C (2.7V to 3.6V)
- JESD7A (2.0V to 6.0V)
- Specified from -40°C to +85°C and -40°C to +125°C
Applications
- Logic functions
- Signal inversion
- Timing circuits
- Control logic
- Data storage
Specifications
- ±20mA minimum input clamping current
- ±20mA maximum output clamping current
- ±12.5mA maximum output current
- 25mA maximum supply current
- -25mA minimum ground current
- 250mW maximum total power dissipation
Functional Diagrams
發佈日期: 2025-04-03
| 更新日期: 2025-04-21