Nexperia NID1101 High-Efficiency Ideal Diode
Nexperia NID1101 High-Efficiency Ideal Diode is designed to replace traditional Schottky diodes in low-voltage power systems. The Nexperia NID1101 offers a significantly lower forward voltage drop while providing both forward conduction and true reverse current blocking. Operating across a 1.5V to 5.5V input range and supporting up to 1.5A continuous current, the NID1101 is ideal for applications requiring minimal power loss and precise current control, such as power OR-ing, redundant supply switchover, and reverse current protection. In dual-supply configurations, the ideal diode enables seamless source transitions without additional control logic. Available in a compact WLCSP4 (SOT8113) package, the NID1101 is characterized for operation over a -40°C to +125°C temperature range.
Features
- 1.5V to 5.5V input voltage range
- Low 29mV typical forward voltage drop at 3.6V input and 100mA load current
- Reverse voltage blocking always, low leakage current when VOUT > VIN
- Forward voltage blocking when disabled
- Low quiescent current
- Enhanced load transient response
- Controlled slew rate at start-up
- Over-temperature protection
- Short-circuit protection
- SOT8113, 4-pin, wafer-level chip-scale package
- -40°C to +125°C specified temperature range
Applications
- Smart wearables
- ORing applications
- Diode replacement
- Battery backup systems
- USB-powered devices
Specifications
- 1.5V to 5.5V operating input voltage range
- 0V to 5.5V operating output voltage
- 0.5A to 1.5A maximum continuous output current range
- 2A maximum pulsed switch current
- 0V to 5.5V EN pin voltage range
- Input current
- 1100nA maximum quiescent, 600nA typical
- 430nA maximum shutdown, 120nA typical
- 50mV to 155mV maximum pass FET forward voltage drop range, 21mV to 110mV typical range
- Reverse current blocking
- 31mV typical RCB activation voltage
- 41mV typical RCB deactivation voltage
- -220nA to 615nA leakage current into IN range, enabled
- -200nA to 1200nA leakage current into OUT range, enabled
- ±500nA leakage current into IN range, disabled
- Enable input
- 1.2V minimum high threshold
- 0.4V maximum low threshold
- 45mV typical hysteresis
- 50nA maximum current
- 2.2A typical short circuit protection over current limit
- 175°C typical over-temperature shutdown
- 35°C typical over-temperature hysteresis
- Typical dynamic characteristics
- 660μs turn-on delay time
- 100μs rise time
- 20μs reverse current blocking time
- 35μs current limit response time
- 173°C/W junction-to-ambient thermal resistance
- 5°C/W junction-to-top characterization parameter
- ESD ratings
- ±2000V HBM per ANSI/ESDA/JEDEC JS-001 class 2
- ±500V CDM per ANSI/ESDA/JEDEC JS-002 class C2a
Simplified Application
Functional Diagrams
Related Development Tools
Nexperia NEVB-NID1101 Evaluation Board
Convenient platform for testing and evaluating the performance of the NID1101 Ideal Diode.