Nexperia PMDXB600UNEL 20V Dual N-Channel Trench MOSFET
Nexperia PMDXB600UNEL 20V Dual N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) housed in a leadless ultrasmall surface-mounted plastic package. The PMDXB600UNEL features a low leakage current, and an exposed drain pad for excellent thermal conduction. Typical applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
Features
- Low leakage current
- Leadless ultrasmall and ultrathin SMD plastic package
- 1.1mm x 1.0mm x 0.37mm
- Exposed drain pad for excellent thermal conduction
- ElectroStatic Discharge (ESD) protection > 1kV HBM
- Drain-source on-state resistance RDSon = 470mΩ
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Videos
發佈日期: 2017-03-23
| 更新日期: 2022-03-11