NXP Semiconductors High Performance RF
NXP Semiconductors enables designers to meet the specifications of the most demanding RF applications. With NXP RF products, you can design systems to the highest specifications while retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels.
NXP Semiconductors annually ships more than 4 billion products. These high-performance RF products play a critical role in a variety of applications - from satellite receivers, cellular base stations, and broadcast transmitters to ISM (Industrial, Scientific, and Medical), aerospace, and defense applications. Innovative Doherty power amplifier architectures, JESD204A serialized data interfaces, and minute GPS LNA s are among the constant innovations NXP places at your fingertips.
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RF Product Categories
Varicap Diodes
NXP Semiconductors Varicap Diodes (or varactors or tuning diodes) solutions principally support voltage variable capacitors, with diode function as a secondary option. These small devices play an important role in a host of RF applications—from tuning frequency multiplier and modulation to coupling elements in filters with controlled bandwidth, parametric amplification, and switching in the VHF and microwave regions.
RF MMICs
NXP Semiconductors smart RF MMIC s (Monolithic Microwave ICs) automatically compensate for temperature and process variations. They dramatically reduce board space requirements, integrating transistors, resistors and capacitors into a single device. NXP's extensive selection of 50Ω gain blocks and low noise devices need no external matching components, reducing overall system costs and increasing reliability.
Power Transistors
NXP Semiconductors offers an RF Power Transistor range that delivers best in-class efficiency, power, ruggedness, and covers all frequency ranges for base station, broadcast / ISM and aerospace, and defense applications.
Microwave Transistors
NXP Semiconductors offer BFU7xxF Microwave Transistors with low noise, high linearity in a plastic, 4-pin dual-emitter SOT343F package. BFU710F Microwave Transistors feature a high maximum power gain of 14dB at 12GHz and noise figure = 1.45dB at 12GHz. BFU760F Microwave Transistors feature high maximum output third order intercept point 32dBm at 1.8GHz. BFU790F Microwave Transistors feature high maximum output power at 1dB compression 20dBm at 1.8GHz. Applications for NXP Semiconductors BFU7xxF Microwave Transistors include high linearity applications, medium output power applications, GPS, Zigbee, and Bluetooth.