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onsemi NVMFS3D6N10MCL Single N-Channel Power MOSFET

onsemi NVMFS3D6N10MCL Single N-Channel Power MOSFET is designed for compact and efficient designs with high thermal performance. This MOSFET features low drain-to-source resistance (RDS(on)) to minimize conduction losses and low QG/capacitance to minimize driver losses. The NVMFS3D6N10MCL MOSFET is AEC-Q101 qualified and PPAP capable. This onsemi MOSFET comes in a small DFN5 flat lead package with 5mm x 6mm dimensions. Typical applications include 48V systems, switching power supplies, power switches (high-side drivers, low-side drivers, and H-bridges), and reverse battery protection.

Features

  • Low RDS(on) to minimize conduction losses
    • 3.6mΩ maximum at 10V
    • 5.8 mΩ maximum at 4.5V
  • 100V drain-to-source voltage (V(BR)DSS)
  • 132A maximum drain current (ID)
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable
  • 5mm x 6mm dimensions

Applications

  • 48V systems for solenoid drivers
  • Switching power supplies for motor control
  • Reverse battery protection
  • Power switches (high-side drivers, low-side drivers, and H-bridges)

Additional Resource

發佈日期: 2020-09-18 | 更新日期: 2024-06-12