onsemi NXH006P120MNF2PTG Half-Bridge SiC Module

onsemi NXH006P120MNF2PTG Half-Bridge SiC Module features two 6mΩ 1200V SiC MOSFET switches and a thermistor in an F2 package. The SiC MOSFET switches use M1 technology and are driven with an 18V to 20V gate drive. The NXH006P120MNF2 module provides improved reliability from planar technology and low die thermal resistance. Typical applications include DC-AC conversion, DC-DC conversion, energy storage systems, UPS, AC-DC conversion, electric vehicle charging stations, and solar inverters.

Features

  • Robust M1 planar SiC MOSFET technology
  • Improved reliability from planar technology and from lower die thermal resistance
  • 18V to 20V gate drive
  • 20V operation for lower losses
  • 18V for compatibility with other modules

Specifications

  • -40°C to 175°C operating junction temperature range
  • 1200V drain-source voltage
  • 950W maximum power dissipation
  • 304A continuous drain current

Applications

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion 
  • UPS
  • Energy storage systems
  • Electric vehicle charging stations
  • Solar inverters
發佈日期: 2021-05-25 | 更新日期: 2024-06-18