onsemi NCV8405A/B Self-Protected Low Side Drivers
onsemi NCV8405A and NCV8405B Self-Protected Low Side Drivers are fully self‑protected, low‑side smart MOSFET drivers designed to provide reliable switching performance in harsh automotive and industrial environments. These three‑terminal devices integrate extensive protection features, including short‑circuit protection, thermal shutdown with automatic restart, overvoltage protection through internal drain‑to‑gate clamping, ESD protection, and strong dV/dt robustness, making the onsemi NCV8405A and NCV8405B drivers highly resilient in electrically demanding conditions.
These drivers support logic‑level (analog) drive capability, allowing easy interfacing with microcontrollers and other low‑voltage control circuits. As AEC‑Q101‑qualified devices, NCV8405A and NCV8405B meet stringent automotive reliability standards and are offered in lead‑free, halogen‑free, and RoHS‑compliant packages.
Electrically, both versions feature a clamped drain‑to‑source breakdown voltage of 42V, a typical RDS(on) of 90mΩ at VGS = 10V, and a current capability of up to 6A, limited internally based on input conditions. Ruggedness is further enhanced by a 275mJ single‑pulse avalanche energy rating, suitable for switching resistive, inductive, or capacitive loads. Available in SOT‑223 and DPAK packages, the NCV8405A and NCV8405AB devices provide compact and thermally efficient options for replacing electromechanical relays or discrete switching circuits in a wide range of automotive and industrial applications.
Features
- Short-circuit protection
- Thermal shutdown with automatic restart
- Overvoltage protection
- Integrated clamp for inductive switching
- ESD protection
- dV/dt robustness
- Internally limited continuous drain current
- Analog drive capability (logic level input)
- DPAK and SOT-223 package options
- NCV prefix for automotive and other applications requiring unique site and control change requirements, AEC−Q101 qualified and PPAP capable
- Lead-free, Halogen-/BFR-free, and RoHS-compliant
Applications
- Switch various resistive, inductive, and capacitive loads
- Can replace electromechanical relays and discrete circuits
- Automotive and industrial
Specifications
- 42V maximum internally clamped drain-to-source voltage
- 42V maximum internally clamped drain-to-gate voltage
- ±14V maximum gate-to-source voltage
- Power dissipation ranges
- 2.0W to 40W for the DPAK
- 1.0W to 11.4W for the SOT-223
- 275mJ maximum single pulse drain-to-source avalanche energy
- 53V maximum load dump voltage
- Off characteristics
- 42V to 51V drain-to-source breakdown voltage range
- 2.0µA to 10µA zero gate voltage drain current range
- 100µA maximum gate input current
- On characteristics
- 1.0V to 2.0V gate threshold voltage range
- 4.0mV/°C typical gate threshold temperature coefficient
- 100mΩ to 210mΩ maximum static drain-to-source on-resistance range
- 1.05V typical source-drain forward-on voltage
- Switching
- 20µs typical turn-on time
- 110µs typical turn-off time
- 1V/µs typical slew-rate on
- 0.4V/µs typical slew-rate off
- Self-protection characteristics
- 3.0A to 13A current limit range
- +150°C to +200°C temperature limit (turn-off) range with 15°C hysteresis at 5V
- +150°C to +185°C temperature limit (turn-off) range with 15°C hysteresis at 10V
- Gate input characteristics
- 50µA (5V) to 400µA (10V) typical device-on gate input current range
- 0.05mA (5V) to 0.4mA (10V) typical current limit gate input current range
- 0.22mA (5V) to 1.0mA (10V) typical thermal limit fault gate input current range
- -40°C to +150°C operating junction temperature range
- Minimum ESD protection
- 4000V Human Body Model (HBM)
- 400V Machine Model (MM)
Schematic
