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onsemi NTBL012N065M3S EliteSiC MOSFET

onsemi NTBL012N065M3S EliteSiC MOSFET features a 650V drain-to-source voltage rating and supports drain current up to about 142A (at 25°C). This MOSFET offers very low on-resistance of 12mΩ (at VGS=18V), high-speed switching with low capacitance (Coss=268pF), and ultra-low gate charge (QG(tot)=143nC). The NTBL012N065M3S MOSFET is 100% avalanche tested and supports operation across a wide temperature range of -55°C to 175°C. This MOSFET is available in a surface-mount H-PSOF8L package. Typical applications include Switch Mode Power Supply (SMPS), solar inverters, Uninterruptible Power Supply (UPS), energy storage, and EV charging infrastructure.

Features

  • 12mΩ typical RDS(ON) at VGS=18V
  • 143nC ultra low gate charge (QG(tot))
  • High speed switching with low capacitance (Coss=268pF)
  • 100% avalanche tested
  • Halide free
  • RoHS compliant with exemption 7a
  • Pb-free 2LI (on second-level interconnection)

Applications

  • Switch Mode Power Supply (SMPS)
  • Solar inverters
  • Uninterruptible Power Supply (UPS)
  • Energy storage
  • EV charging infrastructure

Specifications

  • 650V drain-to-source voltage rating 
  • Continuous drain current:
    • 142A at 25°C
    • 101A at 100°C
  • 199mJ single pulse avalanche energy (ILPK=63A, L=0.1mH, IAS=63A, VDD=100V, and VGS=18V)
  • Power dissipation:
    • 576W at 25°C
    • 288W at 100°C
  • -55°C to 175°C operating temperature range

Dimension Diagram

Mechanical Drawing - onsemi NTBL012N065M3S EliteSiC MOSFET
發佈日期: 2026-06-02 | 更新日期: 2026-06-30