onsemi NTMC083NP10M5L Dual N- & P- Channel Power MOSFET
onsemi NTMC083NP10M5L Dual N- and P- Channel Power MOSFET is designed with low gate charge (QG) and capacitance to minimize the driver losses. This MOSFET features low drain-to-source on-resistance (RDS(on)) to minimize conduction losses. This device is compactly designed with a standard footprint of 5mm x 6mm and is not ESD protected. The NTMC083NP10M5L power MOSFET is ideally used in power tools, battery-operated vacuums, Unmanned Aerial Vehicle (UAV)/drones, material handling, motor drive, and home automation.
Features
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- Not ESD protected
- Small footprint of 5mm x 6mm for compact design
- Pb free and Halogen/BFR free
- RoHS compliant
Applications
- Power tools
- Battery operated vacuums
- Unmanned Aerial Vehicle (UAV) / Drones
- Material handling
- Motor drive
- Home automation
發佈日期: 2021-08-27
| 更新日期: 2022-03-11