PANJIT PJQ1916 & PJQ1917 MOSFETs
PANJIT PJQ1916 and PJQ1917 MOSFETs are n-channel/p-channel devices that feature advanced trench process technology, lead-free in compliance, and are available in DFN1006-3L packages. These devices also use a green molding compound as per IEC 61249 standard and are ESD protected. The MOSFETs are ideally applicable for switch loads, PWM applications, etc.
PJQ1916 N-channel MOSFET
The PJQ1916 N-channel MOSFET operates on a 20V voltage, 950mA current and is halogen-free and RoHS compliant. The MOSFET features a 950mA continuous drain current (ID)and a 1900mA pulse drained current (IDM).
PJQ1917 P-channel MOSFET
The PJQ1917 P-channel MOSFET operates on a -20V voltage, -700mA current, and is halogen-free and RoHS compliant. The MOSFET features a -700mA continuous drain current(ID) and a -1400mA pulsed drain current(IDM).
Features
- Advanced trench process technology
- ESD protected
- Lead-free in compliance with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard
- Specially designed for switch load and PWM application
Specifications
- -55 to 150°C (TJ, TSTG) operating junction and storage temperature range
- 250°C/W (RθJA) typical thermal resistance
- 500mW power dissipation at 25°C Ta
- DFN1006-3L package case
- MIL-STD-750 per solderable, method 2026 terminals
- 0.00002 ounces, 0.0007 grams approx weight
- PJQ1916
- 20V (VDS)drain-source voltage
- ±8V (VGS) gate-source voltage
- 950mA (ID) continuous drain current
- 1900mA (IDM) pulsed drain current
- PJQ1917
- -20V (VDS)drain-source voltage
- ±8V (VGS) gate-source voltage
- -700mA (ID) continuous drain current
- -1400mA (IDM) pulsed drain current
Datasheets
Videos
PJQ1916 And PJQ1917 Schematic Diagram
PJQ1916 And PJQ1917 DFN1006-3L Dimension
發佈日期: 2022-04-06
| 更新日期: 2022-08-30