ROHM Semiconductor RFNxRSM2S Ultra Fast Recovery Diodes
ROHM Semiconductor RFNxRSM2S Ultra Fast Recovery Diodes are silicon epitaxial planar diodes with low forward voltage and low switching loss. These ultra-fast diodes feature a 200V peak reverse voltage and a storage temperature range of -55°C to 175°C. The RFNxRSM2S ultra-fast recovery diodes provide high current overload capacity. These diodes come in a TO-277A package. The RFNxRSM2S ultra-fast recovery diodes are RoHS-compliant and ideal for general rectification applications.
Features
- Silicon epitaxial planar structure type
- 200V peak reverse voltage
- Low forward voltage
- Low switching loss
- High current overload capacity
Applications
- General rectification
View Results ( 6 ) Page
| 零件編號 | 規格書 | 最大衝擊電流 | If - 順向電流 | 恢復時間 | Ir - 反向電流 | Vf - 順向電壓 |
|---|---|---|---|---|---|---|
| RFN4RSM2STFTL1 |  |
80 A | 4 A | 36 ns | 1 uA | 930 mV |
| RFN4RSM2STL1 | |
80 A | 4 A | 36 ns | 1 uA | 930 mV |
| RFN6RSM2STFTL1 | |
80 A | 6 A | 38 ns | 1 uA | 930 mV |
| RFN6RSM2STL1 | |
80 A | 6 A | 38 ns | 1 uA | 930 mV |
| RFN10RSM2STFTL1 | |
130 A | 10 A | 25 ns | 1 uA | 960 mV |
| RFN10RSM2STL1 | |
130 A | 10 A | 25 ns | 1 uA | 960 mV |
發佈日期: 2024-05-22
| 更新日期: 2024-06-11