ROHM Semiconductor RH7G03BBJFRA P-Channel Power MOSFET

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ROHM Semiconductor RH7G03BBJFRA P-Channel Power MOSFET has a drain-source voltage (V_DSS) rating of -40V and a continuous drain current (I_D) rating (V_GS = -10V) of ±22A. This MOSFET is automotive-grade and AEC-Q101 qualified. It comes in a DFN3333T8LSAB package with wettable flanks and is 100% avalanche tested. The ROHM Semiconductor RH7G03BBJFRA has a 33W power dissipation (P_D) and a static drain-source on-state resistance (R_DS(on)) of 38mΩ (typ.) (V_GS = -10V, I_D = -20A) or 49mΩ (typ.) (V_GS = -4.5V, I_D = -10A).