Sanan Semiconductor Automotive Silicon Carbide Schottky Barrier Diodes
Sanan Semiconductor Automotive Silicon Carbide Schottky Barrier Diodes (SBDs) are developed using Sanan’s advanced 3rd generation SiC SBD technology with high performance and reliability. These SBDs register higher efficiency, higher operation temperatures, and lower losses and operate at higher frequencies than Si-based solutions. The Schottky structure shows no recovery at turn-off and allows a low leakage current with a reverse voltage of up to 1200V. The structure can contribute to system miniaturization and achieve lightweight system design. Using RoHS-compliant components and being AEC-Q101 qualified, the Sanan Semiconductor Automotive Silicon Carbide SBDs are qualified for use in automotive applications.
Features
- AEC-Q101 qualified
- Revolutionary Silicon Carbide (SiC) semiconductor material
- No reverse recovery
- High-speed switching performance
- Temperature-independent switching behavior
- Single or dual anode common cathode configuration options
- System cost/size savings due to reduced cooling requirements
- Surface mount and through-hole packages
- SMBF, TO-220-2L, TO-247-2L, TO-247-3L, TO-252-2L, and TO-263-2L package options
- -55°C to +175°C junction temperature range
- Halogen-free and RoHS-compliant
Applications
- DC/DC converters for EV/HEV
- Onboard chargers (OBCs)
Specifications
- 12A to 180A forward surge current range
- 1.3V to 1.35V forward voltage range
- 650V or 1.2kV reverse voltage options
- 1A to 40A forward current range
- 8µA to 60µA reverse current range
Additional Resources
發佈日期: 2024-04-18
| 更新日期: 2024-05-07