SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules
SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance, and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems, and high-voltage DC-to-DC converters.Features
- High-speed switching SiC MOSFETs
- Reliable body diode
- All parts tested to above 1350V
- Direct mounting to the heatsink (isolated package)
- 175°C junction temperature
- Kelvin reference for stable operation
- Low switching losses
- Low junction to case thermal resistance
- Very rugged and easy mounting
- RoHS-compliant
Applications
- Photovoltaic inverter
- Battery charger
- Energy storage system
- High voltage DC-to-DC converter
View Results ( 9 ) Page
| 零件編號 | 規格書 | 晶體管極性 | 下降時間 | Id - C連續漏極電流 | Pd - 功率消耗 | Rds On - 漏-源電阻 | 上升時間 | 標準斷開延遲時間 | 標準開啟延遲時間 | Vds - 漏-源擊穿電壓 | Vgs th - 門源門限電壓 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| GCMX003A120S3B1-N | ![]() |
N-Channel | 28 ns | 625 A | 2.113 kW | 5.5 mOhms | 21 n | 138 ns | 79 ns | 1.2 kV | 4 V |
| GCMX005A120B3B1P | ![]() |
N-Channel | 29 ns | 383 A | 1.154 kW | 4.4 mOhms | 22 ns | 114 ns | 51 ns | 1.2 kV | 1.8 V |
| GCMX020A120B2B1P | ![]() |
N-Channel | 16 ns | 102 A | 385 W | 19 mOhms | 8 ns | 42 ns | 22 ns | 1.2 kV | 1.8 V |
| GCMX003A120S7B1 | ![]() |
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| GCMX005A120S3B1-N | ![]() |
N-Channel | 24 ns | 424 A | 1.531 kW | 7 mOhms | 18 ns | 114 ns | 65 ns | 1.2 kV | 4 V |
| GCMX005A120S7B1 | ![]() |
N-Channel | 25 ns | 348 A | 1.042 kW | 4.9 mOhms | 20 ns | 96 ns | 61 ns | 1.2 kV | 1.8 V |
| GCMX010A120B2B1P | ![]() |
N-Channel | 22 ns | 214 A | 9 mOhms | 13 ns | 75 ns | 40 ns | 1.2 kV | 1.8 V | |
| GCMX010A120B3B1P | ![]() |
N-Channel | 28 ns | 173 A | 577 W | 9 mOhms | 17 ns | 86 ns | 43 ns | 1.2 kV | 1.8 V |
| GCMX040A120B2B1P | ![]() |
N-Channel | 16 ns | 56 A | 217 W | 52 mOhms | 7 ns | 40 ns | 19 ns | 1.2 kV | 4 V |
發佈日期: 2024-03-01
| 更新日期: 2025-05-23

