STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET
STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The device implements innovative super-junction MDmesh DM9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.
The STM STP60N043DM9 MDmesh DM9 Power MOSFET has a very low recovery charge (Qrr), time (trr), and RDS(on). These features tailor the fast-switching super-junction Power MOSFET for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Features
- Fast-recovery body diode
- Excellent RDS(on) per area among silicon-based fast recovery devices
- Low gate charge, input capacitance, and resistance
- 100% avalanche tested
- Extremely dv/dt ruggedness
Applications
- Power supplies and converters
- LLC resonant converter
Typical Application
Related Power MOSFETs
STMicroelectronics MDmesh™ M9功率MOSFET
具備強化裝置結構、低導通電阻和低閘極電荷值。
STMicroelectronics Power MOSFETs
Broad range of breakdown voltages from -500V to 1500V.
COMPLETE YOUR DESIGN
STMicroelectronics 標準產品
可簡易替換的多樣化產品，適合廣泛使用的通用類比IC、獨立元件及序列EEPROM。