STMicroelectronics MDMesh™ N-Channel Power MOSFETs
STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.
Features
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
Applications
- Switching applications
- LC converters
- Resonant converters
Complete Your Design
STMicroelectronics 標準產品
可簡易替換的多樣化產品，適合廣泛使用的通用類比IC、獨立元件及序列EEPROM。
View Results ( 20 ) Page
| 零件編號 | 規格書 | Id - C連續漏極電流 | Vgs - 閘極-源極電壓 | Qg - 閘極充電 | Pd - 功率消耗 |
|---|---|---|---|---|---|
| STB40N60M2 |  |
34 A | - 25 V, 25 V | 57 nC | 250 W |
| STD7NM80 | |
6.5 A | - 30 V, 30 V | 18 nC | 90 W |
| STI28N60M2 | |
22 A | - 25 V, 25 V | 36 nC | 170 W |
| STP18NM80 | |
17 A | - 30 V, 30 V | 70 nC | 190 W |
| STD5N60M2 | |
3.5 A | - 25 V, 25 V | 8.5 nC | 45 W |
| STL9N60M2 | |
4.8 A | - 25 V, 25 V | 10 nC | 48 W |
| STB28N60M2 | |
22 A | - 25 V, 25 V | 36 nC | 170 W |
| STL13N60M6 | |
7 A | - 25 V, 25 V | 13 nC | 52 W |
| STP8N80K5 | |
6 A | - 30 V, 30 V | 16.5 nC | 110 W |
| STL10N60M6 | |
5.5 A | - 25 V, 25 V | 8.8 nC | 48 W |
發佈日期: 2012-07-24
| 更新日期: 2023-12-14