STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors
STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.
The STMicroelectronics SGT transistors combine advanced G‑HEMT structures with robust packaging technologies to support high current capability and ultra‑fast switching behavior, promoting improved thermal performance and compact system designs. Key features include Kelvin‑source pads for optimized gate driving, high power‑management capability, and strong ESD robustness, making these transistors well‑suited for AC‑DC and DC‑DC converters, solar inverters, industrial power supplies, and other high‑frequency, high‑efficiency systems. Overall, ST’s E‑Mode PowerGaN portfolio provides designers with a powerful platform for building next‑generation power electronics with higher efficiency, reduced size, and enhanced performance.
Features
- Surface-mount enhancement mode normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Zero reverse recovery charge
- Single channel configuration
- Kelvin source pad for optimum gate driving (select package styles)
- ESD safeguard
- RoHS compliant
Applications
- AC-DC converters
- DC-DC converters
- Solar inverters
- Adapters for tablets, notebooks, and AIO
- USB Type-C® PD adapters and quick chargers
Specifications
- 1.8V or 2.5V gate-source threshold voltage options
- 650V or 700V drain-source breakdown voltage options
- 6A to 29A continuous drain current range
- 65mΩ to 350mΩ drain-source resistance range
- 47W to 305W power dissipation range
- 1.5nC to 8.5nC gate charge range
- 3.5ns to 9ns rise time range
- 4ns to 9ns fall time range
- 1.2ns to 7ns typical turn-off delay time range
- 0.9ns to 10ns typical turn-on delay time range
- -55°C to +150°C operating temperature range
- DPAK-3, PowerFLAT-4, PowerFLAT-8, and TO-LL-11 package options
Featured Transistors
STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor
Built on GaN technology and designed for demanding power conversion applications.
STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor
E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.
STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor
E-Mode PowerGaN transistor optimized for efficient power conversion in demanding applications.
STMicroelectronics SGT65R65AL e-mode PowerGaN Transistors
650V, 25A transistors combined with well-established packaging technology.
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| 零件編號 | 規格書 | Id - C連續漏極電流 | Pd - 功率消耗 | Qg - 閘極充電 | Rds On - 漏-源電阻 |
|---|---|---|---|---|---|
| SGT350R70GTK |  |
6 A | 47 W | 1.5 nC | 350 mOhms |
| SGT070R70HTO | |
26 A | 231 W | 8.5 nC | 70 mOhms |
| SGT080R70ILB | |
29 A | 188 W | 6.2 nC | 80 mOhms |
| SGT105R70ILB | |
21.7 A | 158 W | 4.8 nC | 105 mOhms |
| SGT140R70ILB | |
17 A | 113 W | 3.5 nC | 140 mOhms |
| SGT190R70ILB | |
11.5 A | 83 W | 2.8 nC | 190 mOhms |
| SGT240R70ILB | |
10 A | 76 W | 2 nC | 240 mOhms |
| SGT65R65AL | |
25 A | 305 W | 5.4 nC | 65 mOhms |