Vishay Semiconductors SiA427DJ 8V TrenchFET®功率MOSFET
Vishay Siliconix SiA427DJ 8V TrenchFET®功率MOSFET采用耐熱增強型PowerPAK SC-70 2mm x 2mm封裝面積，且具有用於P通道裝置的最低導通電阻。Vishay Siliconix SiA427DJ的導通電阻較最具競爭性的P通道裝置低達47%。SiA427DJ TrenchFET功率MOSFET的1.2V低導通電阻額定值，令它們成為低匯流排電壓的最佳選擇。MOSFET因電源線差異所達到的1.5V及1.8V低導通電阻亦有利於採用1.2V功率匯排流之應用，令SiA427DJ可在整體上達致低耗能的最佳效果。Vishay Siliconix SiA427DJ的超小型PowerPAK SC-70封裝經最佳化以用於體積較小的手持式電子產品。它是手機、智慧型手機、MP3播放器、數位相機等設備上的負載開關的最佳選擇。
Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The ultra-small PowerPAK SC-70 package of the Vishay Semiconductors SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more.
特點
- Halogen-free according to IEC 61249-2-21 definition
- TrenchFET® Power MOSFET
- 100% Rg Tested
- Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
- 16mΩ at 4.5V
- 26mΩ at 1.8V
- 32mΩ at 1.5V
- 95mΩ at 1.2V
- Compliant to RoHS Directive 2002/95/EC
應用
- Load switch, for 1.2 V power line for portable and handheld devices
Associated Products
Vishay / Siliconix Power MOSFETs
Low-to-high power MOSFETs that meet the increasing demands of applications in growth markets.
Package Dimensions
發佈日期: 2011-08-18
| 更新日期: 2022-03-11