返回至ROHM Semiconductor

ROHM Semiconductor Automotive 40A & 80A Power MOSFETs

ROHM Semiconductor Automotive 40A and 80A Power MOSFETs are N-channel and P-channel devices. These AEC-Q101 qualified MOSFETs feature low on-resistance, ±80A/±160A pulsed drain current, and up to 142W power dissipation. The 40A and 80A power MOSFETs operate from -55°C to 175°C temperature range and are 100% avalanche tested. These power MOSFETs are ideal for ADAS, automotive, and lighting applications.

Features

  • Low on-resistance
  • ±80A/±160A pulsed drain current
  • Up to 142W power dissipation
  • -55°C to 175°C range temperature range
  • 100% avalanche tested
  • Pb-free plating
  • RoHS compliant

Applications

  • ADAS
  • Automotive
  • Lighting

Datasheets

Related MOSFETs

ROHM Semiconductor RD3x Automotive N-Channel Power MOSFETs

AEC-Q101 MOSFETs featuring low forward voltage, fast recovery time, and high surge capability.

Learn More關於ROHM Semiconductor RD3x Automotive N-Channel Power MOSFETs View Products與ROHM Semiconductor RD3x Automotive N-Channel Power MOSFETs相關
View Results ( 5 ) Page
零件編號 規格書 下降時間 互導 - 最小值 Id - C連續漏極電流 Pd - 功率消耗 Qg - 閘極充電 Rds On - 漏-源電阻 晶體管極性 標準斷開延遲時間 標準開啟延遲時間 Vds - 漏-源擊穿電壓 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓
RD3E08BBJHRBTL RD3E08BBJHRBTL 規格書 180 ns 20 S 80 A 142 W 150 nC 3.7 mOhms P-Channel 220 ns 19 ns 30 V - 20 V, 5 V 2.5 V
RD3G08DBKHRBTL RD3G08DBKHRBTL 規格書 15 ns 12.1 S 80 A 76 W 28 nC 4.1 mOhms N-Channel 56 ns 18 ns 40 V 20 V 2.5 V
RH7G04BBJFRATCB RH7G04BBJFRATCB 規格書 97 ns 14 S 40 A 75 W 25 nC 11.9 mOhms P-Channel 175 ns 14 ns 40 V - 20 V, 5 V 2.5 V
AG091FLD3HRBTL AG091FLD3HRBTL 規格書 11 ns 12 S 80 A 76 W 22 nC 7.5 mOhms N-Channel 50 ns 18 ns 60 V 20 V 2.5 V
RD3L08DBKHRBTL RD3L08DBKHRBTL 規格書 11 ns 12 S 80 A 76 W 22 nC 7.5 mOhms N-Channel 50 ns 18 ns 60 V 20 V 2.5 V
發佈日期: 2025-05-19 | 更新日期: 2025-10-09