ROHM Semiconductor Super Fast Recovery Diodes
ROHM Semiconductor Super Fast Recovery Diodes are designed to improve the efficiency of switching power supplies. These diodes feature silicon epitaxial planar, low forward voltage, and low switching loss. These RFNxLBxS are ideal for general rectification applications.
Features
- Repetitive peak reverse voltage:
- 400V (RFN2LB4S and RFN3LB4S)
- 600V (RFN2LB6S and RFN3LB6S)
- Average rectified forward current:
- 2A (RFN2LB4S and RFN2LB6S)
- 3A (RFN3LB4S and RFN3LB6S)
- Peak forward surge current:
- 35A (RFN2LB6S and RFN3LB6S)
- 55A (RFN2LB4S and RFN3LB4S)
- Small power mold type
- Low forward voltage
- Low switching loss
- Ideal for general rectification
Mechanical Diagram
Associated Diode
ROHM Semiconductor RF302LB2S Super Fast Recovery Diode
Offers low forward voltage and switching losses in a DO-214AA package.
View Results ( 5 ) Page
| 零件編號 | 規格書 | If - 順向電流 | 最大衝擊電流 | Vf - 順向電壓 | Vr - 反向電壓 | 恢復時間 |
|---|---|---|---|---|---|---|
| RF302LB2STBR1 |  |
3 A | 80 A | 840 mV | 16 ns | |
| RFN2LB4STBR1 | |
2 A | 55 A | 930 mV | 400 V | 22 ns |
| RFN2LB6STBR1 | |
2 A | 35 A | 1.3 V | 600 V | 16 ns |
| RFN3LB4STBR1 | |
3 A | 55 A | 980 mV | 400 V | 22 ns |
| RFN3LB6STBR1 | |
3 A | 35 A | 1.4 V | 600 V | 16 ns |
發佈日期: 2025-06-12
| 更新日期: 2025-07-14