Texas Instruments NexFET™功率MOSFET
Texas Instruments NexFET™功率MOSFET在相同電阻下可提供一半的閘極電荷,讓設計人員在雙倍頻率下達到90%的供電效率。這些NexFET功率MOSFET將垂直電流與橫向功率MOSFET結合。這些裝置具有低導通電阻,需要極低的閘極電荷,並採用符合產業標準的封裝尺寸。Texas Instruments NexFET功率MOSFET技術可改善高功率運算、網路、伺服器系統和電源供應器的能源效率。
特點
- 在相同電阻下可提供一半的閘極電荷
- 將垂直電流與橫向功率MOSFET結合
精選產品
Designed to minimize losses in power conversion applications.
Designed to deliver the lowest on resistance and gate charge.
High current, high efficiency, and high frequency capability.
Optimized driver ICs with Dual NexFET MOSFETs used in the device.
Designed to deliver low on-resistance and gate charge in a small package.
發佈日期: 2012-08-20
| 更新日期: 2025-06-23