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Vishay General Semiconductor 170V TMBS Trench MOS Barrier Schottky Rectifiers

Vishay General Semiconductor 170V TMBS Trench MOS Barrier Schottky Rectifiers feature a wide range of current ratings from 10A to 80A in the power TO-220AB, TO-263AB, and TO-3PW packages. With low forward voltage drops down to 0.65V typical at 30A, these Vishay General Semiconductor rectifiers are designed for telecom power supplies.

Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Solder dip 275°C max. 10s, per JESD 22-B106

Applications

  • High frequency DC/DC converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode
  • Reverse battery protection

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Vishay General Semiconductor eSMP® SMPA Schottky Rectifiers

Offers diminished minority carrier injections to the drift region, thus minimizes stored charges.

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零件編號 規格書 說明 If - 順向電流 Vf - 順向電壓
VB60170G-E3/4W VB60170G-E3/4W 規格書 肖特基二極體及整流器 60A 170V TrenchMOS 60 A 870 mV
V60170G-M3/4W V60170G-M3/4W 規格書 肖特基二極體及整流器 60A 170V TrenchMOS 60 A 870 mV
VB10170C-E3/4W VB10170C-E3/4W 規格書 肖特基二極體及整流器 10A 170V TrenchMOS 10 A 840 mV
V40170C-M3/4W V40170C-M3/4W 規格書 肖特基二極體及整流器 40A 170V TrenchMOS 40 A 860 mV
V10170C-M3/4W V10170C-M3/4W 規格書 肖特基二極體及整流器 10A 170V TrenchMOS 10 A 840 mV
VB40170C-E3/4W VB40170C-E3/4W 規格書 肖特基二極體及整流器 40A 170V TrenchMOS 40 A 1.2 V
發佈日期: 2012-10-16 | 更新日期: 2022-03-11