Vishay / Siliconix SiR870DP 100V功率MOSFET
Vishay Siliconix SiR870DP 100V N通道TrenchFET®功率金氧半場效電晶體利用ThunderFET®科技提供業內最低的導通電阻7.8mΩ（於4.5V時）。Vishay Siliconix SiR870DP亦提供非常低的導通電阻6mΩ（於10V時）。這些Vishay Siliconix ThunderFET儀器均可於4.5V時提供業界最低的208 mΩ-nC優點係數(FOM)。低導通電阻指可以減低導電損失和用電量，有助節能的環保方法。SiR870DP 100V TrenchFET功率MOSFET專為高頻率和開關應用而設計。
特點
- Low on-resistance of 7.8mΩ at 4.5V
- Very low on-resistance of 6mΩ at 10V
- Lower conduction losses and reduced power consumption for energy-saving green solutions
- Low 208mΩ-nC FOM at 4.5V
- PowerPAK SO-8 Package
- 100VDS (V)
- ±20VGS (V)
應用
- Fixed telecom
- DC/DC converters
- Primary- and secondary-side switches
Package Dimensions
Related MOSFETs
Vishay / Siliconix ThunderFET® Power MOSFETs
Provides low values of on-resistance for 100V MOSFETs with 4.5V ratings.
Vishay / Siliconix Power MOSFETs
Low-to-high power MOSFETs that meet the increasing demands of applications in growth markets.
發佈日期: 2011-08-01
| 更新日期: 2022-03-11