Vishay SISS7xDN TrenchFET MOSFETs
Vishay SISS7xDN-T1-GE3 TrenchFET MOSFETs use TrenchFET® with ThunderFET technology that optimizes the balance of RDS, QG, QSW, and QOSS. These MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested. The SISS7xDN TrenchFET MOSFETs find applications in primary side switching, synchronous rectification, DC/DC converters, motor drive control, and load switches. These MOSFETs are available in PowerPAK 1212-8S package.
Applications
- Primary side switching
- Synchronous rectification
- DC/DC converter
- Motor drive control
- Load switch
SISS7xDN TrenchFET MOSFETs Circuit Diagram
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| 零件編號 | 規格書 | 說明 | Vds - 漏-源擊穿電壓 | Id - C連續漏極電流 | Qg - 閘極充電 | Rds On - 漏-源電阻 | 晶體管類型 |
|---|---|---|---|---|---|---|---|
| SISS72DN-T1-GE3 |  |
MOSFET 150V Vds 20V Vgs PowerPAK 1212-8S | 150 V | 25.5 A | 22 nC | 42 mOhms | 1 N-Channel |
| SISS70DN-T1-GE3 | |
MOSFET 125V Vds 20V Vgs PowerPAK 1212-8S | 125 V | 31 A | 15.3 nC | 29.8 mOhms | 1 N-Channel |
發佈日期: 2018-08-21
| 更新日期: 2023-03-06