Vishay Dual N-Channel TrenchFET® Power MOSFETs

Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs offer co-packaged MOSFETs to reduce space and increase performance over two discrete. These Dual N-Channel TrenchFET Power MOSFETs combine two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET Power MOSFETs simplify the layout, reduces parasitic inductance from PCB traces, increases efficiency, and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.

Features

  • TrenchFET Power MOSFETs
  • 100% Rg and UIS Tested
  • Halogen-free according to IEC 61249-2-21 definition
  • Compliant to RoHS Directive 2002/95/EC

Applications

  • System power
  • Notebook
  • Servers
  • POL
  • Synchronous Buck Converter
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零件編號 封裝/外殼 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Pd - 功率消耗 規格書
SIZ998DT-T1-GE3 PowerPAIR-6x5-8 30 V 20 A, 60 A 4.7 mOhms, 2.2 mOhms 20.2 W, 32.9 W SIZ998DT-T1-GE3 規格書
SIZ340DT-T1-GE3 PowerPAIR-3x3-8 30 V 30 A, 40 A 9.5 mOhms, 5.1 mOhms 16.7 W, 31 W SIZ340DT-T1-GE3 規格書
發佈日期: 2012-01-24 | 更新日期: 2024-08-15