Vishay / Siliconix SiR870DP 100V功率MOSFET

Vishay Siliconix SiR870DP 100V N通道TrenchFET®功率金氧半場效電晶體利用ThunderFET®科技提供業內最低的導通電阻7.8mΩ（於4.5V時）。Vishay Siliconix SiR870DP亦提供非常低的導通電阻6mΩ（於10V時）。這些Vishay Siliconix ThunderFET儀器均可於4.5V時提供業界最低的208 mΩ-nC優點係數(FOM)。低導通電阻指可以減低導電損失和用電量，有助節能的環保方法。SiR870DP 100V TrenchFET功率MOSFET專為高頻率和開關應用而設計。

These Vishay Siliconix ThunderFET devices also provide an industry-low 208 mΩ-nC figure of merit (FOM) at 4.5V. The low on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. SiR870DP 100V TrenchFET Power MOSFETs are designed for higher frequency and switching applications.

特點

  • Low on-resistance of 7.8mΩ at 4.5V is the industry's lowest
  • Very low on-resistance of 6mΩ at 10V
  • Lower conduction losses and reduced power consumption for energy saving green solutions
  • Idustry-low 208mΩ-nC FOM at 4.5V
  • Package: PowerPAK SO-8
  • VDS (V) 100
  • VGS (V) ± 20

應用

  • Fixed Telecom
  • DC/DC Converter
  • Primary and Secondary Side Switch