IS20M8R0S1P

iDEAL Semiconductor
25-IS20M8R0S1P
IS20M8R0S1P

Mfr.:

Description:
MOSFETs N-CH 200V 128A TO-220

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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Product Attribute Attribute Value Select Attribute
iDEAL Semiconductor
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
200 V
128 A
8.3 mOhms
20 V
4.1 V
73 nC
- 55 C
+ 175 C
333 W
Enhancement
Tube
Brand: iDEAL Semiconductor
Configuration: Single
Fall Time: 5.5 ns
Forward Transconductance - Min: 37 S
Product Type: MOSFETs
Rise Time: 5.9 ns
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 41.8 ns
Typical Turn-On Delay Time: 18.7 ns
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Attributes selected: 0

Datasheet

Videos

Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET

iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET is engineered for high-efficiency SMPS and motor drive applications. This MOSFET delivers low RDS(on) and QSW, resulting in lower switching losses and reduced heat dissipation at both full and partial loads. Typical applications include motor control, boost converters, and SMPS control FETs, and secondary side synchronous rectifiers.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1,000
Expected 9/7/2026
Factory Lead-Time:
8
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
NT$-.--
Ext. Price:
NT$-.--
Est. Tariff:

Pricing (TWD)

Qty. Unit Price
Ext. Price
NT$211.52 NT$211.52
NT$138.38 NT$1,383.80
NT$101.81 NT$10,181.00
NT$90.70 NT$45,350.00
NT$79.95 NT$79,950.00
NT$76.36 NT$190,900.00
NT$72.78 NT$363,900.00

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