DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BVDSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.

結果: 10
選擇 圖像 零件編號
 製造商
說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
規格書
50庫存量
最少： 1
倍數： 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement
Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
規格書
20庫存量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
規格書
50庫存量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
規格書
17庫存量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 3.6 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
規格書
20庫存量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 2.5 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
規格書
31庫存量
最少： 1
倍數： 1

Through Hole To-247-3 N-Channel 1 Channel 1.2 kV 72.7 A 43 mOhms - 8 V, + 19 V 2.5 V 105 nC - 55 C + 175 C 341 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
規格書
78庫存量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 170 C 246 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
規格書
60庫存量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 175 C 246 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
規格書
60庫存量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
規格書
5庫存量
150預期2026/8/11
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement