TP65H050G4WS

Renesas Electronics
227-TP65H050G4WS
TP65H050G4WS

Mfr.:

Description:
GaN FETs 650V, 50mohm GaN FET in TO247-3L

Datasheet:
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Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
34 A
60 mOhms
- 20 V, + 20 V
4.8 V
24 nC
- 55 C
+ 150 C
119 W
Enhancement
GaN
Brand: Renesas Electronics
Configuration: Single
Fall Time: 10.9 ns
Packaging: Tube
Product Type: GaN FETs
Rise Time: 11.3 ns
Factory Pack Quantity: 450
Subcategory: Transistors
Typical Turn-Off Delay Time: 88.3 ns
Typical Turn-On Delay Time: 49.2 ns
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

650V 34A GaN FETs

Renesas Electronics 650V 34A GaN (Gallium Nitride) FETs are normally-off devices using Renesas Electronics's Gen IV platform. The FETs combine a high voltage GaN HEMT with a low voltage silicon MOSFET. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. GaN FETs have inherently superior performance over traditional silicon FETs, offering faster switching and better thermal performance.

In Stock: 596

Stock:
596 Can Ship Immediately
Factory Lead-Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
NT$-.--
Ext. Price:
NT$-.--
Est. Tariff:

Pricing (TWD)

Qty. Unit Price
Ext. Price
NT$408.33 NT$408.33
NT$295.40 NT$2,954.00
NT$245.93 NT$24,593.00
NT$219.04 NT$98,568.00
NT$186.06 NT$167,454.00

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