|
|
碳化矽MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
NT$782.25
-
736庫存量
-
NRND
|
Mouser 元件編號
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SIC_DISCRETE
|
|
736庫存量
|
|
|
NT$782.25
|
|
|
NT$582.20
|
|
|
NT$577.19
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
NT$191.44
-
6,780庫存量
-
4,000預期2027/1/7
|
Mouser 元件編號
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
6,780庫存量
4,000預期2027/1/7
|
|
|
NT$191.44
|
|
|
NT$127.27
|
|
|
NT$90.70
|
|
|
NT$80.30
|
|
|
NT$74.93
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
NT$263.86
-
285庫存量
-
NRND
|
Mouser 元件編號
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
285庫存量
|
|
|
NT$263.86
|
|
|
NT$167.42
|
|
|
NT$140.53
|
|
|
NT$130.14
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
NT$542.05
-
71庫存量
-
960預期2026/8/21
-
NRND
|
Mouser 元件編號
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
71庫存量
960預期2026/8/21
|
|
|
NT$542.05
|
|
|
NT$340.93
|
|
|
NT$307.23
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
NT$394.35
-
42庫存量
-
240預期2026/8/24
-
NRND
|
Mouser 元件編號
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
42庫存量
240預期2026/8/24
|
|
|
NT$394.35
|
|
|
NT$248.08
|
|
|
NT$220.48
|
|
|
NT$201.12
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
NT$579.34
-
2,160在途量
-
NRND
|
Mouser 元件編號
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2,160在途量
|
|
|
NT$579.34
|
|
|
NT$373.92
|
|
|
NT$347.39
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
NT$325.88
-
無庫存前置作業時間 52 週
-
NRND
|
Mouser 元件編號
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
無庫存前置作業時間 52 週
|
|
|
NT$325.88
|
|
|
NT$190.36
|
|
|
NT$160.61
|
|
|
NT$154.16
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
臺灣