STP65N045M9

STMicroelectronics
511-STP65N045M9
STP65N045M9

Mfr.:

Description:
MOSFETs N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
More Information
Learn more about STMicroelectronics STP65N045M9

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
55 A
45 mOhms
- 30 V, 30 V
4.2 V
80 nC
- 55 C
+ 150 C
245 W
Enhancement
Tube
Brand: STMicroelectronics
Product Type: MOSFETs
Series: MDmesh M9
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Italy
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP65N045M9 MDmesh M9 Power MOSFET

STMicroelectronics STP65N045M9 MDmesh M9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low RDS(on) per area. The device implements innovative super-junction MDmesh M9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.

In Stock: 339

Stock:
339
Can Ship Immediately
On Order:
1,000
Expected 3/5/2027
Factory Lead-Time:
24
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
NT$-.--
Ext. Price:
NT$-.--
Est. Tariff:

Pricing (TWD)

Qty. Unit Price
Ext. Price
NT$315.84 NT$315.84
NT$172.08 NT$1,720.80
NT$158.46 NT$15,846.00
NT$149.49 NT$74,745.00
NT$148.06 NT$148,060.00

An unexpected error has occurred.


Have a question? Please visit the Help Center.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.