IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

結果: 25
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
封裝/外殼
安裝風格
配置
集電極-發射極最大電壓VCEO
集電極-發射極飽和電壓
柵極發射機最大電壓
連續集電極電流在25 C
Pd - 功率消耗
最低工作溫度
最高工作溫度
系列
資格
封裝
STMicroelectronics IGBT Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long
規格書
400庫存量
最少： 1
倍數： 1

TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 375 W - 55 C + 175 C Tube


STMicroelectronics IGBT Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
規格書
74庫存量
1,000預期2026/11/6
可選用MouseReel
最少： 1
倍數： 1
: 1,000

Si D2PAK SMD/SMT Single 600 V 1.8 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGB40V60F Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
規格書
783庫存量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

Si SMD/SMT Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Reel, Cut Tape, MouseReel

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 6 A low loss
規格書
2,083庫存量
可選用MouseReel
最少： 1
倍數： 1
: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT 600V 40A High Speed Trench Gate IGBT
規格書
801庫存量
最少： 1
倍數： 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40V60DF Tube
STMicroelectronics IGBT 600V 60A trench gate field-stop IGBT
規格書
1,162庫存量
1,800預期2026/8/25
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60H65DFB Tube
STMicroelectronics IGBT 600V 60A Trench Gate 1.8V Vce IGBT
規格書
737庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60F Tube
STMicroelectronics IGBT Trench gate H series 600V 15A HiSpd
規格書
712庫存量
4,000預期2026/12/11
最少： 1
倍數： 1

Si TO-220-3 FP Through Hole Single 600 V 1.6 V - 20 V, 20 V 30 A 30 W - 55 C + 175 C STGF15H60DF Tube
STMicroelectronics IGBT 600V 20A High Speed Trench Gate IGBT
規格書
851庫存量
最少： 1
倍數： 1

Si TO-220-3 Through Hole Single 600 V 2.3 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGP20V60DF Tube
STMicroelectronics IGBT 600V 30A High Speed Trench Gate IGBT
規格書
580庫存量
最少： 1
倍數： 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGW30V60DF Tube
STMicroelectronics IGBT 600V 40A trench gate field-stop IGBT
規格書
622庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H60DLFB Tube
STMicroelectronics IGBT 600V 60A High Speed Trench Gate IGBT
規格書
670庫存量
最少： 1
倍數： 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60DF Tube
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l
規格書
811庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube
STMicroelectronics IGBT Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
規格書
493庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 72 A 227 W - 55 C + 175 C STGWA40HP65FB2 Tube
STMicroelectronics IGBT 600V 20A Hi Spd TrenchGate FieldStop
規格書
162庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20V60F Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
規格書
3,817在途量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 1.85 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30V60DF Reel, Cut Tape, MouseReel

STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
規格書
984在途量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube


STMicroelectronics IGBT Trench gate field-stop 650 V, 40 A high speed HB series IGBT
規格書
280庫存量
最少： 1
倍數： 1

Si TO-3PF Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 62.5 W - 55 C + 175 C STGFW40H65FB
STMicroelectronics IGBT Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long
規格書
1,200預期2026/10/9
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Tube
STMicroelectronics IGBT 600V 20A Hi Spd TrenchGate FieldStop
規格書
無庫存前置作業時間 22 週
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 600 V 2 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20H60DF Tube
STMicroelectronics STGB20H65FB2
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high-speed HB2 series IGBT in a D2PAK package
規格書
無庫存前置作業時間 20 週
可選用MouseReel
最少： 1
倍數： 1
: 1,000

- 20 V, 20 V Reel, Cut Tape, MouseReel
STMicroelectronics STGB20H65DFB2
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
規格書
無庫存前置作業時間 15 週
最少： 1,000
倍數： 1,000
: 1,000

- 20 V, 20 V Reel
STMicroelectronics STGP30H65DFB2
STMicroelectronics IGBT Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 packag
規格書
無庫存前置作業時間 15 週
最少： 1,000
倍數： 1,000

- 20 V, 20 V Tube

STMicroelectronics IGBT Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
規格書
前置作業時間 20 週
最少： 1
倍數： 1
: 1,000

Si D2PAK-3 SMD/SMT Single 435 V 1.1 V - 12 V, 16 V 25 A 150 W - 55 C + 175 C STGB25N40LZAG AEC-Q101 Reel, Cut Tape

STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss in a TO-247 long leads
規格書
無庫存前置作業時間 22 週
最少： 600
倍數： 600

Si - 20 V, 20 V STGWA30M65DF2 Tube