YQx0 Automotive-Grade Schottky Barrier Diodes

ROHM Semiconductor YQx0 Automotive-Grade Schottky Barrier Diodes provide low forward voltages, reverse currents, and capacitances with high reliability. The AEC-Q101 qualified YQx0 Schottky Barrier Diodes feature a Trench MOS structure with a +150°C junction temperature. Applications include automotive, switching power supplies, freewheeling diodes, and reverse polarity protection.

結果: 5
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 產品 安裝風格 封裝/外殼 配置 技術 If - 順向電流 Vrrm - 重複反向電壓 Vf - 順向電壓 Ifsm - 順向浪湧電流 Ir - 反向電流 最高工作溫度 封裝
ROHM Semiconductor 肖特基二極體及整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati 4,497庫存量
2,500在途量
帶狀裁切
NT$78.87
NT$38.36
NT$34.13
NT$27.14
NT$25.92
捲
NT$22.44
最少: 1
倍數: 1
: 2,500
Schottky Diodes SMD/SMT TO-252-3 Single Si 20 A 100 V 790 mV 150 A 80 uA + 150 C Reel, Cut Tape
ROHM Semiconductor 肖特基二極體及整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera 2,538庫存量
帶狀裁切
NT$81.02
NT$39.08
NT$35.03
NT$27.86
捲
NT$23.16
最少: 1
倍數: 1
: 4,000
Schottky Diodes SMD/SMT TO-277A-3 Dual Anode Common Cathode Si 10 A 100 V 610 mV 200 A 80 uA + 175 C Reel, Cut Tape
ROHM Semiconductor 肖特基二極體及整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 1,900庫存量
帶狀裁切
NT$124.04
NT$62.02
NT$55.93
NT$45.53
捲
NT$41.59
NT$41.23
最少: 1
倍數: 1
: 1,000
Schottky Diodes SMD/SMT TO-263L-3 Dual Anode Common Cathode Si 20 A 100 V 650 mV 150 A 70 uA + 150 C Reel, Cut Tape, MouseReel
ROHM Semiconductor 肖特基二極體及整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 2,000庫存量
帶狀裁切
NT$109.70
NT$70.62
NT$48.76
NT$39.44
捲
NT$36.57
最少: 1
倍數: 1
: 1,000
Schottky Diodes SMD/SMT TO-263L-3 Single Si 20 A 100 V 790 mV 200 A 80 uA + 150 C Reel, Cut Tape
ROHM Semiconductor 肖特基二極體及整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 1,243庫存量
帶狀裁切
NT$120.81
NT$78.87
NT$54.49
NT$44.10
捲
NT$42.30
NT$40.15
最少: 1
倍數: 1
: 1,000
Schottky Diodes SMD/SMT TO-263L-3 Single Si 30 A 100 V 780 mV 200 A 150 uA + 150 C Reel, Cut Tape