SCT4045DWAHRTL

Name: ROHM Semiconductor SCT4045DWAHRTL
Brand: ROHM Semiconductor
SKU: 755-SCT4045DWAHRTL
Price: 436.29 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

755-SCT4045DWAHRTL

製造商編號：

SCT4045DWAHRTL

製造商：

ROHM Semiconductor

說明：

碳化矽MOSFET TO263 750V 31A N-CH SIC

規格書:

SCT4045DWAHRTL 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於ROHM Semiconductor SCT4045DWAHRTL的資訊

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	ROHM Semiconductor
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	TO-263-7
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	750 V
Id - C連續漏極電流:	31 A
Rds On - 漏-源電阻:	59 mOhms
Vgs - 閘極-源極電壓:	- 4 V, + 21 V
Vgs th - 門源門限電壓 :	4.8 V
Qg - 閘極充電:	63 nC
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	93 W
通道模式:	Enhancement
品牌:	ROHM Semiconductor
配置:	Single
下降時間:	10 ns
互導 - 最小值:	9.3 S
封裝:	Reel
封裝:	Cut Tape
產品:	SiC MOSFETS
產品類型:	SiC MOSFETS
上升時間:	16 ns
原廠包裝數量:	1000
子類別:	Transistors
晶體管極性:	N-Channel
晶體管類型:	1 N-Channel
類型:	Power MOSFET
標準斷開延遲時間:	27 ns
標準開啟延遲時間:	5.1 ns

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

SCT4045DWAHRTL 規格書

Specification Sheets

Datasheet - Chinese (English language)

此功能需要啟用JavaScript。

合規守則

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

原產地分類

原產國:: 泰國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

SCT4045DWAHR AEC-Q101 N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4045DWAHR AEC-Q101 N-Channel Silicon Carbide (SiC) Power MOSFET is an automotive-grade device engineered for high-efficiency and high-reliability applications in harsh environments. With a drain-source voltage rating of 750V and a continuous drain current of 31A (at +25°C per chip), this dual MOSFET device offers a typical on-resistance of just 45mΩ per channel, enabling reduced conduction losses and improved thermal performance. Packaged in a compact TO-263-7LA configuration, the ROHM SCT4045DWAHR supports high-density designs and efficient thermal management.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.