Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

分離式半導體的類型

變更類別視圖
結果: 309
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS 產品類型 技術 安裝風格 封裝/外殼
STMicroelectronics MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected 182庫存量
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh 251庫存量
2,000預期2027/2/19
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2 296庫存量
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220FP package 287庫存量
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected 839庫存量
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 1,497庫存量
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5 1,362庫存量
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package 77庫存量
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-3PF-3
STMicroelectronics MOSFET N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package 385庫存量
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-3PF-3
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 23庫存量
1,200預期2026/9/23
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 579庫存量
1,800預期2026/9/23
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 30A High Speed Trench Gate IGBT 580庫存量
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247
STMicroelectronics IGBT 600V 40A trench gate field-stop IGBT 960庫存量
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 60A trench gate field-stop IGBT 1,938庫存量
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 60A High Speed Trench Gate IGBT 526庫存量
600預期2026/11/6
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247
STMicroelectronics IGBT 600V 60A Trench Gate 1.8V Vce IGBT 717庫存量
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247-3


STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 600庫存量
最少: 1
倍數: 1

IGBT Transistors Si Through Hole

STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 384庫存量
600預期2027/1/15
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 60 A high speed 10庫存量
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB series IGBT 364庫存量
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT 650V 60A HSpd trench gate field-stop IGBT 21庫存量
最少: 1
倍數: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics MOSFET N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 pac 61庫存量
最少: 1
倍數: 1
: 1,000

MOSFETs Si SMD/SMT H2PAK-2
STMicroelectronics MOSFET N-CH 80V 17mOhm 180A STripFET VII 66庫存量
3,000在途量
最少: 1
倍數: 1
: 1,000

MOSFETs Si SMD/SMT TO-263-7
STMicroelectronics MOSFET N-Ch 600 V 0.168 Ohm 18 A MDmesh M2 197庫存量
1,000預期2027/5/7
最少: 1
倍數: 1

MOSFETs Si Through Hole TO-262-3
STMicroelectronics MOSFET N-channel 600 V, 0.29 Ohm typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV 782庫存量
最少: 1
倍數: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-5x6-8